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MRF8S19140HR3

P1-P3P4-P6P7-P9P10-P12P13-P14
MRF8S19140HR3 MRF8S19140HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA, W-- CDMA and LTE base station applications with
frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
! Typical Single--Carrier W--CDMA Performance: V
DD
=28Volts,I
DQ
=
1100 mA, P
out
= 34 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
G
ps
(dB)
"
D
(%)
Output PAR
(dB)
ACPR
(dBc)
1930 MHz 18.8 31.7 6.4 --38.5
1960 MHz 19.1 31.4 6.5 --38.8
1990 MHz 19.3 31.5 6.5 --38.8
! Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 191 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
! Typical P
out
@ 1 dB Compression Point ≃ 138 Watts CW
Features
! 100% PAR Tested for Guaranteed Output Power Capability
! Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
! Internally Matched for Ease of Use
! Integrated ESD Protection
! Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
! Designed for Digital Predistortion Error Correction Systems
! Optimized for Doherty Applications
! RoHS Compliant
! In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
--0.5, +65 Vdc
Gate--Source Voltage V
GS
--6.0, +10 Vdc
Operating Voltage V
DD
32, +0 Vdc
Storage Temperature Range T
stg
--65 to +150 #C
Case Operating Temperature T
C
150 #C
Operating Junction Temperature
(1,2)
T
J
225 #C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 75#C, 34 W CW, 28 Vdc, I
DQ
= 1100 mA, 1960 MHz
Case Temperature 80#C, 140 W CW, 28 Vdc, I
DQ
= 1100 mA, 1960 MHz
R
$
JC
0.48
0.45
#C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf
. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers.Go to http://www.freescale.com/rf
.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF8S19140H
Rev. 0, 5/2010
Freescale Semiconductor
Technical Data
1930--1990 MHz, 34 W AVG., 28 V
CDMA, W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8S19140HR3
MRF8S19140HSR3
CASE 465--06, STYLE 1
NI--780
MRF8S19140HR3
CASE 465A--06, STYLE 1
NI--780S
MRF8S19140HSR3
% Freescale Semiconductor, Inc., 2010.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF8S19140HR3 MRF8S19140HSR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2 (Minimum)
Machine Model (per EIA/JESD22--A115) A (Minimum)
Charge Device Model (per JESD22-- C101) IV (Minimum)
Table 4. Electrical Characteristics (T
A
=25#C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
=65Vdc,V
GS
=0Vdc)
I
DSS
— — 10 &Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
=28Vdc,V
GS
=0Vdc)
I
DSS
— — 1 &Adc
Gate--Source Leakage Current
(V
GS
=5Vdc,V
DS
=0Vdc)
I
GSS
— — 1 &Adc
On Characteristics
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
= 200 &Adc)
V
GS(th)
1.0 1.8 2.5 Vdc
Gate Quiescent Voltage
(V
DD
=28Vdc,I
D
= 1100 mAdc, Measured in Functional Test)
V
GS(Q)
1.9 2.6 3.4 Vdc
Drain--Source On--Voltage
(V
GS
=10Vdc,I
D
=3Adc)
V
DS(on)
0.1 0.24 0.3 Vdc
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQ
= 1100 mA, P
out
= 34 W Avg., f = 1960 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Power Gain
G
ps
18.0 19.1 21.0 dB
Drain Efficiency "
D
30.0 31.4 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 5.9 6.5 — dB
Adjacent Channel Power Ratio ACPR — --38.8 --37.5 dBc
Input Return Loss IRL — -- 2 4 -- 7 dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQ
= 1100 mA, P
out
=34WAvg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Frequency
G
ps
(dB)
"
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1930 MHz 18.8 31.7 6.4 --38.5 -- 2 4
1960 MHz 19.1 31.4 6.5 --38.8 -- 2 4
1990 MHz 19.3 31.5 6.5 --38.8 -- 1 5
1. Part internally matched both on input and output.
(continued)
MRF8S19140HR3 MRF8S19140HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
=25#C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQ
= 1100 mA, 1930--1990 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW P1dB — 138 — W
IMD Symmetry @ 55 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMD
sym
— 15 —
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
res
— 68 — MHz
Gain Flatness in 60 MHz Bandwidth @ P
out
=34WAvg. G
F
— 0.5 — dB
Gain Variation over Temperature
(--30#Cto+85#C)
(G — 0.017 — dB/#C
Output Power Variation over Temperature
(--30#Cto+85#C)
(P1dB — 0.010 — dBm/#C
P1-P3P4-P6P7-P9P10-P12P13-P14

MRF8S19140HR3

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Description:
RF MOSFET Transistors HV8 2GHZ 140W NI780H
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