MRF8S19140HR3 MRF8S19140HSR3
7
RF Device Data
Freescale Semiconductor
V
DD
=28Vdc,I
DQ
= 1100 mA, P
out
=34WAvg.
f
MHz
Z
source
)
Z
load
)
1880 4.27 -- j3.42 1.62 -- j3.54
1900 4.33 -- j3.32 1.61 -- j3.45
1920 4.40 -- j3.22 1.61 -- j3.36
1940 4.47 -- j3.12 1.60 -- j3.27
1960 4.54 -- j3.02 1.60 -- j3.18
1980 4.61 -- j2.93 1.60 -- j3.09
2000 4.69 -- j2.84 1.59 -- j3.00
2020 4.73 -- j2.80 1.59 -- j2.96
2040 4.63 -- j2.80 1.59 -- j2.96
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured from
drain to ground.
Figure 9. Series Equivalent Source and Load Impedance
Z
source
Z
load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
8
RF Device Data
Freescale Semiconductor
MRF8S19140HR3 MRF8S19140HSR3
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
35
P
in
, INPUT POWER (dBm)
V
DD
=28Vdc,I
DQ
= 1100 mA, Pulsed CW,
10 &sec(on) 10% Duty Cycle
54
52
50
36
55
53
47
P
out
, OUTPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
51
56
58
3432 403130
57
49
48
29
Ideal
Actual
33 37 38 39
1990 MHz
1930 MHz
1960 MHz
1990 MHz
1960 MHz
1930 MHz
f
(MHz)
P1dB P3dB
W atts dBm Watts dBm
1930 170 52.3 207 53.1
1960 165 52.2 205 53.1
1990 166 52.2 203 53.1
Test Impedances per Compression Level
f
(MHz)
Z
source
)
Z
load
)
1930 P1dB 4.97 -- j5.89 1.28 -- j2.16
1960 P1dB 7.33 -- j5.00 1.18 -- j2.04
1990 P1dB 8.82 -- j5.01 1.04 -- j2.68
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8S19140HR3 MRF8S19140HSR3
9
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS

MRF8S19140HR3

Mfr. #:
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV8 2GHZ 140W NI780H
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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