OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MRF8S19140HR3

P1-P3P4-P6P7-P9P10-P12P13-P14
4
RF Device Data
Freescale Semiconductor
MRF8S19140HR3 MRF8S19140HSR3
Figure 1. MRF8S19140HR3(HSR3) Test Circuit Component Layout
MRF8S19140
Rev. 4
CUT OUT AREA
R2
C14
C1
C15* C16*
C2
C7
R1
C8
C4
C3
C9
C5
C13
C6
C17*
C18*
C10 C11
C12
*Stacked
Table 5. MRF8S19140HR3(HSR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C2, C3, C4, C5, C6 10 pF Chip Capacitors ATC100B110JT500XT ATC
C7, C8, C9 0.8 pF Chip Capacitors ATC800B0R8BT500XT ATC
C10, C11 10 &F, 50 V Chip Capacitors GRM55DR61H106KA88L Murata
C12 330 &F, 63 V Electrolytic Capacitor MCRH63V337M13X21--RH Multicomp
C13 6.8 &F, 50 V Chip Capacitor C4532X7R1H685KT TDK
C14 47 &F, 16 V Tantalum Capacitor T491D476K016AT Kemet
C15, C17 .01 &F, 100 V Chip Capacitors C1825C103K1GACTU Kemet
C16, C18 .56 &F, 50 V Chip Capacitors C1825C564J5RACTU Kemet
R1 5.1 ), 1/8 W Chip Resistor CRCW08055R10JNEA Vishay
R2 4.75 ), 1/4 W Chip Resistor CRCW12064R75FNEA Vishay
PCB 0.030*, +
r
=2.55 AD255A Arlon
MRF8S19140HR3 MRF8S19140HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
1880
IRL
G
ps
ACPR
f, FREQUENCY (MHz)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ P
out
= 34 Watts Avg.
-- 2 8
0
-- 7
-- 1 4
-- 2 1
18
20
19.8
19.6
-- 3 9
36
34
32
30
-- 3 4
-- 3 5
-- 3 6
-- 3 7
"
D
, DRAIN
EFFICIENCY (%)
"
D
G
ps
, POWER GAIN (dB)
19.4
19.2
19
18.8
18.6
18.4
18.2
1900 1920 1940 1960 1980 2000 2020 2040
28
-- 3 8
-- 3 5
PARC
PARC (dB)
-- 2
0
-- 0 . 5
-- 1
-- 1 . 5
-- 2 . 5
ACPR (dBc)
Figure 3. Intermodulation D istortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 6 0
-- 1 0
-- 2 0
-- 3 0
-- 5 0
1 100
IMD, INTERMODULATION DISTORTION (dBc)
-- 4 0
IM5--U
IM5--L
IM7--L
IM7--U
V
DD
=28Vdc,P
out
= 55 W (PEP), I
DQ
= 1100 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
P
out
, OUTPUT POWER (WATTS)
-- 1
-- 3
-- 5
40
0
-- 2
-- 4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
20
60 80 120
21
57
51
45
39
33
27
"
D
, DRAIN EFFICIENCY (%)
-- 1 d B = 3 3 W
100
"
D
ACPR
PARC
ACPR (dBc)
-- 5 0
-- 2 0
-- 2 5
-- 3 0
-- 4 0
-- 3 5
-- 4 5
20
G
ps
, POWER GAIN (dB)
19
18
17
16
15
14
G
ps
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
V
DD
=28Vdc,P
out
=34W(Avg.)
I
DQ
= 1100 mA
IM3--U
IM3--L
-- 2 d B = 4 5 W
-- 3 d B = 6 1 W
V
DD
=28Vdc,I
DQ
= 1100 mA, f = 1960 MHz, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
6
RF Device Data
Freescale Semiconductor
MRF8S19140HR3 MRF8S19140HSR3
TYPICAL CHARACTERISTICS
1
G
ps
ACPR
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
-- 2 0
10
22
0
60
50
40
30
20
"
D
, DRAIN EFFICIENCY (%)
"
D
G
ps
, POWER GAIN (dB)
20
18
10 100 300
10
-- 6 0
ACPR (dBc)
16
14
12
0
-- 3 0
-- 4 0
-- 5 0
Figure 6. Broadband Frequency Response
0
24
1460
f, FREQUENCY (MHz)
V
DD
=28Vdc
P
in
=0dBm
I
DQ
= 1100 mA
16
12
8
1585
GAIN (dB)
20
Gain
1710 1835 1960 2085 2210 2335 2460
IRL
-- 3 0
0
-- 5
-- 1 0
-- 1 5
-- 2 0
IRL (dB)
4--25
1990 MHz
1930 MHz
1960 MHz
1930 MHz
1960 MHz
1990 MHz
V
DD
=28Vdc,I
DQ
= 1100 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
W--CDMA TEST SIGNAL
0.0001
100
0
PEAK--TO-- AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
10
-- 6 0
--100
10
(dB)
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 7 0
-- 8 0
-- 9 0
3.84 MHz
Channel BW
7.21.8 5.43.60-- 1 . 8-- 3 . 6-- 5 . 4-- 9 9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
-- 7 . 2
--ACPR in 3.84 MHz
Integrated BW
+ACPRin3.84MHz
Integrated BW
-- 1 0
0
13579
P1-P3P4-P6P7-P9P10-P12P13-P14

MRF8S19140HR3

Mfr. #:
Buy MRF8S19140HR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV8 2GHZ 140W NI780H
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet