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IS61LV25616AL-10TL

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
10 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
12/15/2011
IS61LV25616AL
AC WAVEFORMS
WRITE CYCLE NO. 3
(WE Controlled. OE is LOW During Write Cycle)
(1)
DATA UNDEFINED
t
WC
VALID ADDRESS
LOW
LOW
t
PWE2
t
AW
t
HA
HIGH-Z
t
PBW
t
HD
t
SA
t
HZWE
ADDRESS
CE
UB, LB
WE
D
OUT
D
IN
OE
DATAIN VALID
t
LZWE
t
SD
UB_CEWR3.eps
WRITE CYCLE NO. 4
(LB, UB Controlled, Back-to-Back Write)
(1,3)
DATA UNDEFINED
t
WC
ADDRESS 1 ADDRESS 2
t
WC
HIGH-Z
t
PBW
WORD 1
LOW
WORD 2
UB_CEWR4.eps
t
HD
t
SA
t
HZWE
ADDRESS
CE
UB, LB
WE
D
OUT
D
IN
OE
DATAIN
VALID
t
LZWE
t
SD
t
PBW
DATAIN
VALID
t
SD
t
HD
t
SA
t
HA
t
HA
Notes:
1. The internal Write time is defined by the overlap of CE = Low, UB and/or LB = Low, and WE = LOW. All signals must be in
valid states to initiate a Write, but any can be deasserted to terminate the Write. The
t sa, t Ha, t sD, and t HD timing is referenced
to the rising or falling edge of the signal that terminates the Write.
2. Tested with OE HIGH for a minimum of 4 ns before WE = LOW to place the I/O in a HIGH-Z state.
3. WE may be held LOW across many address cycles and the LB, UB pins can be used to control the Write function.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 11
Rev. F
12/15/2011
IS61LV25616AL
DATA RETENTION WAVEFORM (CE Controlled)
DATA RETENTION SWITCHING CHARACTERISTICS (LL)
Symbol Parameter Test Condition Options Min. Typ.
(1)
Max. Unit
VDr VDD for Data Retention See Data Retention Waveform 2.0 — 3.6 V
IDr Data Retention Current VDD = 2.0V, CE ≥ VDD – 0.2V Com. — 5 10 mA
Ind. — — 15
tsDr Data Retention Setup Time See Data Retention Waveform 0 — — ns
trDr Recovery Time See Data Retention Waveform trc — — ns
Note 1: Typical values are measured at VDD = 3.0V, Ta = 25
o
c and not 100% tested.
V
DD
CE ≥ VDD
- 0.2V
t
SDR tRDR
VDR
CE
GND
1.65V
1.4V
Data Retention Mode
12 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
12/15/2011
IS61LV25616AL
ORDERING INFORMATION
Commercial Range: 0°C to +70°C
Speed (ns) Order Part No. Package
10 IS61LV25616AL-10T TSOP (Type II)
IS61LV25616AL-10TL TSOP (Type II), Lead-free
IS61LV25616AL-10K 400-mil SOJ
12 IS61LV25616AL-12T TSOP (Type II)
Industrial Range: –40°C to +85°C
Speed (ns) Order Part No. Package
10 IS61LV25616AL-10TI TSOP (Type II)
IS61LV25616AL-10TLI TSOP (Type II), Lead-free
IS61LV25616AL-10KI 400-mil SOJ
IS61LV25616AL-10KLI 400-mil SOJ, Lead-free
IS61LV25616AL-10LQI LQFP
IS61LV25616AL-10LQLI LQFP, Lead-free
IS61LV25616AL-10BI Mini BGA
(8mm x 10mm)
IS61LV25616AL-10BLI Mini BGA
(8mm x 10mm), Lead-free
12 IS61LV25616AL-12TI TSOP (Type II)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

IS61LV25616AL-10TL

Mfr. #:
Buy IS61LV25616AL-10TL
Manufacturer:
ISSI
Description:
SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v
Lifecycle:
New from this manufacturer.
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