4 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
12/15/2011
IS61LV25616AL
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VoH Output HIGH Voltage VDD = Min., IoH = –4.0 mA 2.4 V
VoL Output LOW Voltage VDD = Min., IoL = 8.0 mA 0.4 V
VIH Input HIGH Voltage 2.0 VDD + 0.3 V
VIL Input LOW Voltage
(1)
–0.3 0.8 V
ILI Input Leakage GND VIn VDD
Com. –2 2 µA
Ind. –5 5
ILo Output Leakage
GND Vout VDD Com. –2 2 µA
Outputs Disabled Ind. –5 5
Notes:
1.
VIL (min.) = –2.0V for pulse width less than 10 ns.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
Vterm Terminal Voltage with Respect to GND –0.5 to VDD+0.5 V
tstg Storage Temperature –65 to +150 °C
Pt Power Dissipation 1.0 W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
OPERATING RANGE
VDD
Range Ambient Temperature 10ns 12ns
Commercial 0°C to +70°C 3.3V +10%, -5% 3.3V + 10%
Industrial –40°C to +85°C 3.3V +10%, -5% 3.3V + 10%
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 5
Rev. F
12/15/2011
IS61LV25616AL
CAPACITANCE
(1)
Symbol Parameter Conditions Max. Unit
cIn Input Capacitance VIn = 0V 6 pF
cout Input/Output Capacitance Vout = 0V 8 pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-10 -12
Symbol Parameter Test Conditions Min. Max. Min. Max. Unit
Icc VDD Dynamic Operating VDD = Max., Com. 100 90 mA
Supply Current Iout = 0 mA, f = fmaX Ind. 110 100
Isb TTL Standby Current VDD = Max., Com. 50 45 mA
(TTL Inputs) VIn = VIH or VIL Ind. 55 50
CE VIH, f = fmaX.
Isb1 TTL Standby Current VDD = Max., Com. 20 20 mA
(TTL Inputs) VIn = VIH or VIL Ind. 25 25
CE VIH, f = 0
Isb2 CMOS Standby VDD = Max., Com. 15 15 mA
Current (CMOS Inputs) CE VDD – 0.2V, Ind. 20 20
VIn VDD – 0.2V, or
VIn 0.2V, f = 0
Note:
1. At f = f
maX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Shaded area product in development
6 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
12/15/2011
IS61LV25616AL
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-10 -12
Symbol Parameter Min. Max. Min. Max. Unit
trc Read Cycle Time 10 12 ns
taa Address Access Time 10 12 ns
toHa Output Hold Time 2 2 ns
tace CE Access Time 10 12 ns
tDoe OE Access Time 4 5 ns
tHzoe
(2)
OE to High-Z Output 4 5 ns
tLzoe
(2)
OE to Low-Z Output 0 0 ns
tHzce
(2
CE to High-Z Output 0 4 0 6 ns
tLzce
(2)
CE to Low-Z Output 3 3 ns
tba LB, UB Access Time 4 5 ns
tHzb
(2)
LB, UB to High-Z Output 0 3 0 4 ns
tLzb
(2)
LB, UB to Low-Z Output 0 0 ns
tPu Power Up Time 0 0 ns
tPD Power Down Time 10 12 ns
AC TEST CONDITIONS
Parameter Unit
Input Pulse Level 0V to 3.0V
Input Rise and Fall Times 3 ns
Input and Output Timing and Reference Level 1.5V
Output Load See Figures 1 and 2
AC TEST LOADS
Figure 1 Figure 2
319
5 pF
Including
jig and
scope
353
OUTPUT
3.3V
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of
0V to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage.
319
30 pF
Including
jig and
scope
353
OUTPUT
3.3V

IS61LV25616AL-10TL

Mfr. #:
Manufacturer:
ISSI
Description:
SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union