DC and AC parameters M24512-x, M24256-Bx
22/37
Table 12. Input parameters
Symbol Parameter
(1)
1. Sampled only, not 100% tested.
Test condition Min. Max. Unit
C
IN
Input capacitance (SDA) 8 pF
C
IN
Input capacitance (other pins) 6 pF
Z
L
(2)
2. E2,E1,E0: Input impedance when the memory is selected (after a Start condition).
Input impedance
(E2, E1, E0, WC
)
V
IN
< 0.3V
CC
30 kΩ
Z
H
(2)
Input impedance
(E2, E1, E0, WC)
V
IN
> 0.7V
CC
500 kΩ
Table 13. DC characteristics (M24xxx-W)
Symbol Parameter
Test conditions (see Table 8 and
Tab l e 1 1)
Min. Max. Unit
I
LI
Input leakage current
(SCL, SDA, E0, E1,
E2)
V
IN
= V
SS
or
V
CC
device in Standby mode
± 2 µA
I
LO
Output leakage
current
SDA in Hi-Z, external voltage applied
on SDA: V
SS
or
V
CC
± 2 µA
I
CC
Supply current (Read)
V
CC
= 2.5 V, f
c
= 400 kHz
(rise/fall time < 50 ns)
1mA
V
CC
= 5.5 V, f
c
= 400 kHz
(rise/fall time < 50 ns)
2mA
I
CC0
Supply current (Write) During t
W
, 2.5 V < V
CC
< 5.5 V 5
(1)
1. Characterized value, not tested in production.
mA
I
CC1
Standby supply
current
Device not
selected
(2)
, V
IN
= V
SS
or
V
CC
, V
CC
= 2.5 V
2. The device is not selected after power-up, after a READ command (after the Stop condition), or after the
completion of the internal write cycle t
W
(t
W
is triggered by the correct decoding of a WRITE command).
Device grade 3 5
µA
Device grade 6 2
V
IN
= V
SS
or
V
CC
, V
CC
= 5.5 V 5 µA
V
IL
Input low voltage
(SCL, SDA, WC
)
–0.45 0.3V
CC
V
V
IH
Input high voltage
(SCL, SDA, WC
)
0.7V
CC
V
CC
+0.6 V
V
OL
Output low voltage I
OL
= 2.1 mA, V
CC
= 2.5 V 0.4 V
