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Document Number: 68979
S10-0548-Rev. B, 08-Mar-10
Vishay Siliconix
Si5853DDC
Notes:
a. Package limited.
b. Surface mounted on FR4 board.
c. t ≤ 5 s.
d. See Solder Profile (www.vishay.com/doc?73257
). The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f .Maximum under steady state conditions for MOSFETs is 130 °C/W.
g. Maximum under steady state conditions for Schottky is 125 °C/W.
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient (MOSFET)
b, c, f
R
thJA
77 95
°C/W
Maximum Junction-to-Foot (Drain) (MOSFET)
R
thJF
33 40
Maximum Junction-to-Ambient (Schottky)
b, c, g
R
thJA
85 105
Maximum Junction-to-Foot (Drain) (Schottky)
R
thJF
40 50
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= - 250 µA
- 20 V
V
DS
Temperature Coefficient ΔV
DS/TJ
I
D
= - 250 µA
- 13
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)/TJ
2.4
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 0.4 - 1 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 8 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 20 V, V
GS
= 0 V
- 1
µA
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 85 °C
- 10
On-State Drain Current
a
I
D(on)
V
DS
≤ - 5 V, V
GS
= - 4.5 V
- 10 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 2.9 A
0.085 0.105
Ω
V
GS
= - 2.5 V, I
D
= - 2.5 A
0.117 0.143
V
GS
= - 1.8 V, I
D
= - 1.5 A
0.155 0.188
Forward Transconductance
a
g
fs
V
DS
= - 10 V, I
D
= - 2.9 A
7S
Dynamic
b
Input Capacitance
C
iss
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
320
pFOutput Capacitance
C
oss
60
Reverse Transfer Capacitance
C
rss
47
Total Gate Charge
Q
g
V
DS
= - 10 V, V
GS
= - 8 V, I
D
= - 2.9 A
7.9 12
nC
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 2.9 A
4.7 7.1
Gate-Source Charge
Q
gs
0.65
Gate-Drain Charge
Q
gd
1.35
Gate Resistance
R
g
f = 1 MHz 6.5 Ω
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 10 V, R
L
= 4.4 Ω
I
D
≅ - 2.3 A, V
GEN
= - 4.5 V, R
g
= 1 Ω
15 25
ns
Rise Time
t
r
17 30
Turn-Off Delay Time
t
d(off)
21 30
Fall Time
t
f
10 15
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 10 V, R
L
= 4.4 Ω
I
D
≅ - 2.3 A, V
GEN
= - 8 V, R
g
= 1 Ω
510
Rise Time
t
r
10 15
Turn-Off Delay Time
t
d(off)
20 30
Fall Time
t
f
10 15
