SI5853DDC-T1-E3

Document Number: 68979
S10-0548-Rev. B, 08-Mar-10
www.vishay.com
7
Vishay Siliconix
Si5853DDC
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=110 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
10
-3
10
-2
1
10
100010
-1
10
-4
100
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.1
0.01
1
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
Duty Cycle = 0.5
0.05
0.02
Single Pulse
0.1
1
0.1
0.01
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
10
-3
10
-2
110
-1
10
-4
www.vishay.com
8
Document Number: 68979
S10-0548-Rev. B, 08-Mar-10
Vishay Siliconix
Si5853DDC
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Reverse Current vs. Junction Temperature
0255075100125150
10
T
J
- Junction Temperature (°C)
- Reverse Current (mA)I
R
0.1
1
0.01
I
R
=20 V
0.001
I
R
=5 V
Forward Voltage Drop
0.0 0.1 0.2 0.3 0.4 0.5 0.6
T
J
= 150 °C
V
F
- Forward Voltage Drop (V)
- Forward Current (A)I
F
T
J
= 25 °C
0.1
1
Capacitance
0
30
60
90
120
150
180
0 5 10 15 20 25 30
V
KA
- Reverse Voltage (V)
Junction Capacitance (pF)
Document Number: 68979
S10-0548-Rev. B, 08-Mar-10
www.vishay.com
9
Vishay Siliconix
Si5853DDC
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68979
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
0.05
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=100 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
0.02
Normalized Thermal Transient Impedance, Junction-to-Foot
1
0.1
0.01
0.2
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Single Pulse
0.1
10
-3
10
-2
110
-1
10
-4
0.02
0.05

SI5853DDC-T1-E3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -20V Vds 8V Vgs 1206-8 ChipFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet