Document Number: 68979
S10-0548-Rev. B, 08-Mar-10
www.vishay.com
5
Vishay Siliconix
Si5853DDC
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
10
1
100
T
J
= 25 °C
T
J
= 150 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.3
0.4
0.5
0.6
0.7
0.8
0.9
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.0
0.1
0.2
0.3
0.4
012345
T
J
=25 °C
T
J
= 125 °C
I
D
= 2.9 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V )
0
4
8
12
16
Power (W)
Time (s)
10 10000.10.010.001 1001
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
0.1
T
A
= 25 °C
Single Pulse
10 s, 1 s
Limited byR
DS(on)
*
BVDSS Limited
1ms
100 µs
10 ms
100 ms
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D