IS61WV204816BLL-10BLI

IS61/64WV204816ALL
IS61/64WV204816BLL
Integrated Silicon Solution, Inc.- www.issi.com 1
Rev. 0B
06/22/2016
2Mx16 HIGH-SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY
FEATURES
High-speed access time: 10ns, 12ns
High- performance, low power CMOS process
Multiple center power and ground pins for
greater noise immunity
Easy memory expansion with CS# and OE#
TTL compatible inputs and outputs
Single power supply
1.65V-2.2V VDD (IS61/64WV204816ALL)
2.4V-3.6V VDD (IS61/64WV204816BLL)
Packages available :
- 48 ball mini BGA (6mm x 8mm)
- 48 pin TSOP (Type I)
Industrial and Automotive temperature support
Lead-free available
Data Control for upper and lower bytes
DESCRIPTION
The
ISSI
IS61/64WV204816BLL are high-speed, 32M bit
static RAMs organized as 2048K words by 16 bits. It is
fabricated using
ISSI
's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit
design techniques, yields high-performance and low power
consumption devices.
When CS# is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory
expansion is provided by using Chip Enable and Output
Enable inputs. The active LOW Write Enable (
WE#)
controls both writing and reading of the memory. A data
byte allows Upper Byte (
UB#)
and Lower Byte (
LB#)
access.
The device is packaged in the JEDEC standard 48-Pin
TSOP (TYPE I) and 48-pin mini BGA (6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
COLUMN IO
CS#
WE#
LB#
CONTROL
CIRCUIT
I/ O
DATA
CIRCUIT
2048K x 16
MEMORY
ARRAY
DECODER
VDD
VSS
A0 A20
I/O0 I/O7
Lower Byte
I/O8 I/O15
Upper Byte
UB#
OE#
Copyright © 2016 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
PRELIMINARY INFORMATION
JULY 2016
IS61/64WV204816ALL
IS61/64WV204816BLL
Integrated Silicon Solution, Inc.- www.issi.com 2
Rev. 0B
06/22/2016
PIN CONFIGURATIONS
48-Pin mini BGA (6mm x 8mm)
LB# A0OE# A1 A2 NC
I/O8 A3UB# A4 CE# I/O0
I/O9 A5I/O10 A6 I/O1 I/O2
VSS A17I/O11 A7 I/O3 VDD
VDD NCI/O12 A16 I/O4 VSS
I/O14 A14I/O13 A15 I/O5 I/O6
I/O15 A12A19 A13 WE# I/O7
A18 A9A8 A10 A11 A20
1 2 3 4 5 6
A
B
C
D
E
F
G
H
48-Pin TSOP ,TYPE I ( 12mm x 20mm )
A2
A1
A0
NC
CS#
I/O0
I/O1
I/
O
2
I/O3
VDD
VSS
I/O4
I/O5
I/O6
I/O7
WE#
A19
A18
A17
A16
A15
A7
A8
OE#
UB#
LB#
I/O15
I/O14
I/O13
I/O12
VDD
VSS
I/O11
I/O10
I/O9
I/O8
A 9
A10
A11
A12
A13
A14
3
4
5
6
7
8
9
10
11
12
14
13
15
16
17
18
34
33
32
31
30
29
28
27
26
25
23
24
22
21
20
19
44
43
42
41
40
39
38
37
36
35
45
A4
A3
A5
A6
1
2
48
47
46
NC
A20
PIN DESCRIPTIONS
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control
(I/O0-I/O7)
Upper-byte Control
(I/O8-I/O15)
No Connection
Power
Ground
IS61/64WV204816ALL
IS61/64WV204816BLL
Integrated Silicon Solution, Inc.- www.issi.com 3
Rev. 0B
06/22/2016
FUNCTION DESCRIPTION
SRAM is one of random access memories. Each byte or word has an address and can be accessed randomly. SRAM
has three different modes supported. Each function is described below with Truth Table.
STANDBY MODE
Device enters standby mode when deselected (CS# HIGH). The input and output pins (I/O0-15) are placed in a high
impedance state. CMOS input in this mode will maximize saving power.
WRITE MODE
Write operation issues with Chip selected (CS#) and Write Enable (WE#) input LOW. The input and output pins (I/O0-
15) are in data input mode. Output buffers are closed during this time even if OE# is LOW. UB# and LB# enables a
byte write feature. By enabling LB# LOW, data from I/O pins (I/O0 through I/O7) are written into the location specified
on the address pins. And with UB# being LOW, data from I/O pins (I/O8 through I/O15) are written into the location.
READ MODE
Read operation issues with Chip selected (CS# LOW) and Write Enable (WE#) input HIGH. When OE# is LOW, output
buffer turns on to make data output. Any input to I/O pins during READ mode is not permitted. UB# and LB# enables a
byte read feature. By enabling LB# LOW, data from memory appears on I/O0-7. And with UB# being LOW, data from
memory appears on I/O8-15.
In the READ mode, output buffers can be turned off by pulling OE# HIGH. In this mode, internal device operates as
READ but I/Os are in a high impedance state. Since device is in READ mode, active current is used.
POWER UP INITIALIZATION
The device includes on-chip voltage sensor used to launch POWER-UP initialization process.
When VDD reaches stable level, the device requires 150us of tPU (Power-Up Time) to complete its self-initialization
process.
When initialization is complete, the device is ready for normal operation.
tPU 150 us
VDD
Stable VDD
0V
Device Initialization Device for Normal Operation
TRUTH TABLE
Mode
CS#
WE#
OE#
LB#
UB#
I/O0-I/O7
I/O8-I/O15
VDD Current
Not Selected
H
X
X
X
X
High-Z
High-Z
ISB1, ISB2
Output Disabled
L
H
H
L
L
High-Z
High-Z
ICC
L
H
H
H
L
High-Z
High-Z
Read
L
H
L
L
H
DOUT
High-Z
ICC
L
H
L
H
L
High-Z
DOUT
L
H
L
L
L
DOUT
DOUT
Write
L
L
X
L
H
DIN
High-Z
ICC
L
L
X
H
L
High-Z
DIN
L
L
X
L
L
DIN
DIN

IS61WV204816BLL-10BLI

Mfr. #:
Manufacturer:
ISSI
Description:
SRAM 32Mb High-Speed Async 1Mbx16 10ns
Lifecycle:
New from this manufacturer.
Delivery:
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