ADGM1004 Data Sheet
Rev. A | Page 12 of 20
TERMINOLOGY
Insertion Loss (IL)
IL is the amount of signal attenuation between the input and
output ports of the switch when the switch is in the on state.
Expressed in decibels, ensure that insertion loss is as small as
possible for maximum power transfer.
An example calculation of insertion loss based on the setup in
Figure 19 is as follows:
IL (dB) = −20log
10
|S
RF2RFC
|
where S
RF2RFC
is the transmission coefficient measured from RF2
to RFC with RF2 in the on position. All unused switches are in
the off position and terminated in a purely resistive load of 50 Ω.
Isolation (I
SO
)
I
SO
is the amount of signal attenuation between the input and
output ports of the switch when the switch is in the off state.
Expressed in decibels, ensure that isolation is as large as possible.
An example calculation of isolation based on the setup in Figure 20
is as follows:
I
SO
(dB) = −20log
10
|S
RFCRF1
|
where S
RFCRF1
is the transmission coefficient measured from RFC
to RF1 with RF1 in the off position. All unused switches are in
the off position and terminated in a purely resistive load of 50 Ω.
Crosstalk (C
TK
)
C
TK
is a measure of unwanted signals coupled through from one
channel to another because of parasitic capacitance.
An example calculation of crosstalk based on the setup in
Figure 21 is as follows:
C
TK
(dB) = −20log
10
|S
RF1RF2
|
where S
RF1RF2
is the transmission coefficient measured from RF1
to RF2 with RF1 in the off position and RF2 in the on position.
All unused switches are in the off position and terminated in a
purely resistive load of 50 Ω.
Return Loss (RL)
RL is the magnitude of the reflection coefficient expressed in
decibels, and the amount of reflected signal relative to the
incident signal.
An example calculation of return loss based on the setup in
Figure 19 is as follows:
RL (dB) = −20log
10
|S
11
|
where S
11
is the reflection coefficient of the port under test.
Third-Order Intermodulation Intercept (IIP3)
IIP3 is the intersection point of the fundamental P
OUT
vs. P
IN
extrapolated line and the third-order intermodulation products
extrapolated line of a two-tone test. IIP3 is a figure of merit that
characterizes the switch linearity.
Second-Order Intermodulation Intercept (IIP2)
IIP2 is the intersection point of the fundamental P
OUT
vs. P
IN
extrapolated line and the second-order intermodulation products
extrapolated line of a two-tone test. IIP2 is a figure of merit that
characterizes the switch linearity.
Second Harmonic (HD2)
HD2 is the amplitude of the second harmonic, where, for a signal
whose fundamental frequency is f, the second harmonic has a
frequency of 2 f. This measurement is a single-tone test,
expressed with reference to the carrier signal (dBc).
Third Harmonic (HD3)
HD3 is the amplitude of the third harmonic, where, for a signal
whose fundamental frequency is f, the third harmonic has a
frequency of 3 f. This measurement is a single tone test,
expressed with reference to the carrier signal (dBc).
On Switching Time (t
ON
)
t
ON
is the time it takes for the switch to turn on. It is measured
from 50% of the control signal (INx) to 90% of the on level. No
power was applied through the switch during this test (cold
switched). The switch was terminated into a 50load.
Off Switching Time (t
OFF
)
t
OFF
is the time it takes for the switch to turn off. It is measured
from 50% of the control signal (INx) to 10% of the on level. No
power was applied through the switch during this test (cold
switched). The switch was terminated into a 50 Ω load.
Settling Time Rising Edge
The settling time rising edge is the time it takes for the power of
an RF signal to settle within 0.05 dB of its final steady state
value. The switch was terminated into a 50load.
Settling Time Falling Edge
The settling time falling edge is the time it takes for the power
of an RF signal to settle within 0.05 dB of its final steady state
value. The switch was terminated into a 50load.
Actuation Frequency
The actuation frequency refers to the speed at which the
ADGM1004 can be switched on and off. Actuation frequency is
dependent on both settling times and on/off switching times.
Power-Up Time
The power-up time is a measure of the time required for the
device to power up and start to pass 90% of an RF input signal
after V
DD
has reached 95%.
Video Feedthrough
Video feedthrough is a measure of the spurious signals present
at the RFx ports of the switch when the control voltage is switched
from high to low or from low to high without an RF signal present.
Internal Oscillator Frequency
The internal oscillator frequency is the value of the on-board
oscillator that drives the gate control chip of the ADGM1004.
Data Sheet ADGM1004
Rev. A | Page 13 of 20
Internal Oscillator Feedthrough
The internal oscillator feedthrough is the amount of internal
oscillator signal that feeds through to the RFx and RFC pins of
the switch. This signal appears as a noise spur on the RFx and
RFC pins of the switch at the frequency the oscillator is
operating at and harmonics thereof.
On Resistance (R
ON
)
R
ON
is the resistance of a switch in the closed/on state measured
between the package pins. Measure resistance in 4-wire mode
to null out any cabling or PCB series resistances.
On Resistance Variation
On resistance variation is the variation in the on resistance of
the switch over the specified criteria in Table 1.
Continuously On Lifetime
The continuously on lifetime parameter measures how long the
switch is left in a continuously on state. If the switch is left in
the on position for an extended period, it affects the turn off
mechanism of the device.
Actuation Lifetime
Actuation lifetime is the number of consecutive open/close/
open cycles that can complete without the on resistance
exceeding a specified limit and no occurrence of failures to
open (FTO) or failures to close (FTC).
Cold Switching
Cold switching operates the switch in a mode so that no voltage
differential exists between source and drain when the switch is
closed and/or no current is flowing source to drain when the
switch opens. All switches have longer lives when cold switched.
Hot Switching
Hot switching is operating the switch in a mode where a voltage
differential exists between source and drain when the switch is
closed and/or current is flowing RFx to RFC when the switch is
opened. Hot switching results in a reduced switch life, depending
on the magnitude of the open circuit voltage between the source
and the drain.
Input High Voltage (V
INH
)
V
INH
is the minimum input voltage for Logic 1.
Input Low Voltage (V
INL
)
V
INL
is the maximum input voltage for Logic 0.
ADGM1004 Data Sheet
Rev. A | Page 14 of 20
THEORY OF OPERATION
The ADGM1004 is a wideband SP4T switch fabricated using
Analog Devices, Inc., MEMS switch technology. This technology
enables high power, low loss, low distortion gigahertz switches
to be realized for demanding RF applications.
A key strength of the MEMS switch is that it simultaneously
brings together best-in-class high frequency RF performance
and 0 Hz/dc precision performance. This combination coupled
with superior reliability and a tiny surface mountable form
factor make the MEMS switch the ideal switching solution for
all RF and precision signal instrumentation needs.
Figure 27 shows a stylized cross section graphic of the switch
with dimensions. The switch is an electrostatically actuated
cantilever beam connected in a 3-terminal configuration.
Functionally, it is analogous to a field effect transistor (FET);
the terminals can be used as a source, gate, and drain.
SILICON
SILICON CA
P
SOURCE
DRAIN
CANTILEVER BEAM
G
A
TE
CON
TACT GA
P
ME
T
AL
15173-126
Figure 27. Cross Section of the MEMS Switch Design Showing the Cantilever
Switch Beam (Not to Scale)
When a dc actuation voltage is applied between the gate electrode
and the source (the switch beam), an electrostatic force is
generated, resulting in attracting the beam toward the substrate.
A separate on-board charge pump IC generates the bias voltage;
80 V is used for actuation.
When the bias voltage between the gate and the source exceeds the
threshold voltage of the switch, V
TH
, the contacts on the beam
touch the drain, which completes the circuit between the source
and the drain and turns the switch on. When the bias voltage is
removed, that is, 0 V on the gate electrode, the beam acts as a
spring generating a sufficient restoring force to open the
connection between the source and the drain, thus breaking
the circuit and turning the switch off.
The silicon cap covering the switch die is shown in Figure 27. This
cap hermetically seals the switch, which improves reliability.
The switch contacts do not suffer from dry switching or low power
switching lifetime degradation.
DIGITAL INTERFACE
The ADGM1004 is controlled via a parallel interface. Standard
CMOS/LVTTL signals applied through this interface control
the actuation or release of all of the switch channels of the
ADGM1004. Gate signals applied are boosted to provide the
required voltages needed to actuate the MEMS switch.
Pin 1 to Pin 4 (IN1 to IN4) control the switching functions of
the ADGM1004. When a Logic 1 is applied to one of these pins,
the gate of the corresponding switch is activated, and the switch
turns on. Conversely, when a Logic 0 is applied to any of these
pins, the switch turns off. Note that it is possible to connect
more than one RFx input to RFC at a time. The truth table for
the ADGM1004 is given in Table 5.
Table 5. Truth Table
IN1 IN2 IN3 IN4 RF1 to RFC RF2 to RFC RF3 to RFC RF4 to RFC
0 0 0 0 Off Off Off Off
0 0 0 1 Off Off Off On
0 0 1 0 Off Off On Off
0 0 1 1 Off Off On On
0 1 0 0 Off On Off Off
0 1 0 1 Off On Off On
0 1 1 0 Off On On Off
0 1 1 1 Off On On On
1 0 0 0 On Off Off Off
1 0 0 1 On Off Off On
1 0 1 0 On Off On Off
1
0
1
1
On
Off
On
On
1 1 0 0 On On Off Off
1 1 0 1 On On Off On
1 1 1 0 On On On Off
1 1 1 1 On On On On

ADGM1004JCPZ-R2

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
RF Switch ICs >1kV HBM ESD MEMS Switch Solution
Lifecycle:
New from this manufacturer.
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