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ADGM1004JCPZ-R2

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21
Data Sheet ADGM1004
Rev. A | Page 3 of 20
SPECIFICATIONS
V
DD
= 3.1 V to 3.3 V, GND = 0 V, all specifications at 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Min Typ
Max Unit Test Conditions/Comments
2
DYNAMIC CHARACTERISTICS
−3 dB Bandwidth BW
RF1, RF4 9.5 10.8 GHz RF1 to RFC and RF4 to RFC channels
RF2, RF3 11.5 13 GHz RF2 to RFC and RF3 to RFC channels
Insertion Loss
3
IL 0.45 0.6 dB At 2.5 GHz; RFC to RFx
0.63 0.95 dB At 6.0 GHz; RFC to RFx
Isolation
3
I
SO
22
dB
At 2.5 GHz; RFC to RFx
16 19 dB At 6.0 GHz; RFC to RFx
Crosstalk
3
C
TK
27 30 dB At 2.5 GHz; RFx to RFx
22 24 dB At 6.0 GHz; RFx to RFx
Return Loss
3
RL 14 17 dB DC to 6.0 GHz
Third-Order Intermodulation Intercept
3
IIP3 67 dBm Input: 900 MHz and 901 MHz;
input power = 27 dBm
Second-Order Intermodulation
Intercept
3
IIP2 95 dBm Input: 900 MHz and 901 MHz;
input power = 27 dBm
Second Harmonic
3
HD2 −90 dBc Input: 5.4 MHz; input power = 0 dBm
−74 dBc Input: 150 MHz and 800 MHz;
input power = 27 dBm
Third Harmonic
3
HD3 −80 dBc Input: 150 MHz and 800 MHz;
input power = 27 dBm
Total Harmonic Distortion
3
THD + N −102 dBc R
L
= 300 Ω, f = 1 kHz, RFx = 2.5 V p-p
Maximum RF Power
3
32 dBm Switch in the on state and terminated into
50 Ω , 0°C to 85°C
DC Voltage Range −6 +6 V On switch dc voltage operation range,
0°C to 85°C
On Switching Time t
ON
30 75 µs 50% INx to 90% RFx, 50 Ω termination,
0°C to 85°C
Off Switching Time t
OFF
5 30 µs 50% INx to 10% RFx, 50 Ω termination,
0°C to 85°C
Settling Time
Rising Edge 40 µs 50% INx to 0.05 dB final IL value, 50 Ω
termination
Falling Edge 10 µs 50% INx to 0.05 dB final IL value, 50 Ω
termination
Actuation Frequency
3
5
kHz
All switches toggled simultaneously;
0°C to 85°C
Power-Up Time 0.55 ms C
CP
= 47 pF; 95% V
DD
to 90% RFx; 0°C to
85°C
Video Feedthrough
3
16 mV peak 1 MΩ termination
Internal Oscillator Frequency 6 16 MHz 0°C to 85°C
Internal Oscillator Feedthrough
3, 4
dBm
Spectrum analyzer resolution bandwidth
(RBW) = 200 Hz; one switch in on state,
all others off with 50 Ω terminations
SWITCH PROPERTIES
On Resistance R
ON
1.8 3.5 Ω I
DS
5
= 50 mA, 0 V input bias, at 1 ms after
actuation, maximum specification from
0°C to 85°C
On Resistance Variation
Over Actuations
∆R
ON
Ω
10
9
actuations; from 0°C to 85°C;
1 kHz cycling frequency;
220 mA load between toggles
ADGM1004 Data Sheet
Rev. A | Page 4 of 20
Parameter Symbol Min Typ
1
Max Unit Test Conditions/Comments
2
Between Channels ∆R
ON CH_CH
0.25 1 Ω Maximum value tested from 0°C to 85°C
Over Time ∆R
ON TIME
−0.11 −0.32 Ω R
ON
change from 1 ms to 100 ms after
actuation; maximum value tested from
0°C to 85°C
On Resistance Repeatability
∆R
ON REP
Ω
1 on/off/on actuation cycle
On Resistance Input Voltage Bias ∆R
ON VBIAS
0.17 Ω I
DS
= 50 mA, from −6 V to +6 V input bias
RF Port
On Capacitance
3
C
RF ON
3 pF At 1 MHz
Off Capacitance
3
C
RF OFF
1.5 pF At 1 MHz
On Leakage 5 nA RFx (off channels) = 6 V; RFC/RFx (on
channel) = −6 V; maximum specification
from 0°C to 85°C
Off Leakage 0.5 nA RFx = 6 V; RFC = −6 V; maximum
specification from 0°C to 85°C
Continuously On Lifetime
3
7.2 Years Median time before failure
6
at 50°C
Actuation Lifetime
3
10
9
Cycles Cold switched; load between toggling is
220 mA; tested at 85°C
DIGITAL INPUTS Minimum and maximum over 0°C to 85°C
Input High Voltage V
INH
2 V
Input Low Voltage V
INL
0.8 V
Input Current I
INL
/I
INH
0.025 1 µA V
IN
= V
INL
or V
INH
POWER REQUIREMENTS Minimum and maximum over 0°C to 85°C
Voltage V
DD
3.1 3.3 V
Current I
DD
3 4 mA V
DD
= 3.3 V; digital inputs = 0 V or V
DD
1
Typical specifications tested at 25°C with V
DD
= 3.3 V.
2
RFx is RF1, RF2, RF3, and RF4. INx is IN1, IN2, IN3, and IN4.
3
Guaranteed by design, but not subject to production test.
4
Disable the internal oscillator to eliminate feedthrough.
5
I
DS
is the drain source current.
6
This value shows the median time it takes for 50% of a sample lot to fail.
Data Sheet ADGM1004
Rev. A | Page 5 of 20
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 2.
Parameter Rating
V
DD
to GND −0.3 V to +6 V
Digital Inputs
1
−0.3 V to V
DD
+ 0.3 V or 30 mA
(whichever occurs first)
DC Voltage Rating
2
±10 V
Current Rating
2
250 mA
RF Power Rating
3
33 dBm
Operating Temperature Range
0°C to +85°C
Storage Temperature Range −65°C to +150°C
Reflow Soldering (Pb-Free)
Peak Temperature 260 (+0/−5)°C
Time at Peak Temperature 10 sec to 30 sec
ESD
Human Body Model
RF1 to RF4 and RFC Pins 5 kV
All Other Pins 2.5 kV
Field Induced Charged Device
Model
4
All Pins
1.25 kV
Group D
Mechanical Shock
5
1500 g with 0.5 ms pulse
Vibration 20 Hz to 2000 Hz acceleration at
50 g
Constant Acceleration 30,000 g
1
Clamp overvoltages at INx by internal diodes. Limit the current to the
maximum ratings given.
2
This rating is with respect to the switch in the on position with no radio
frequency signal applied.
3
This rating is with respect to the switch in the on position and terminated
into 50 Ω. The rating is 27 dBm when the switch is unterminated.
4
A safe automated handling and assembly process is achieved at this rating
level by implementing industry-standard ESD controls.
5
If the device is dropped during handling, do not use the device.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Only one absolute maximum rating can be applied at any one
time.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
θ
JA
is the natural convection junction to ambient thermal
resistance measured in a one cubic foot sealed enclosure.
θ
JC
is the junction to case thermal resistance.
Table 3. Thermal Resistance
Package Type θ
JA
θ
JC
Unit
CP-24-4
1
60 75 °C/W
1
A simulated θ
JA
number is evaluated using the maximum junction
temperature in the package and the total power being dissipated in the
package under operating conditions. For thermal performance calculation
purposes at 25°C, a power dissipation of 113 mW per switch can be used.
This value is calculated from a typical R
ON
of 1.8 Ω and an absolute maximum
current rating of 250 mA.
ESD CAUTION
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21

ADGM1004JCPZ-R2

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Buy ADGM1004JCPZ-R2
Manufacturer:
Analog Devices Inc.
Description:
RF Switch ICs >1kV HBM ESD MEMS Switch Solution
Lifecycle:
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