4
Absolute Maximum Ratings Thermal Information
Supply Voltage, V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7V
Reference Voltage, V
RT
, V
RB
. . . . . . . . . . . . . . . . . . . . V
DD
to V
SS
Analog Input Voltage, V
IN
. . . . . . . . . . . . . . . . . . . . . . . V
DD
to V
SS
Digital Input Voltage, CLK . . . . . . . . . . . . . . . . . . . . . . . V
DD
to V
SS
Digital Output Voltage, V
OH
, V
OL
. . . . . . . . . . . . . . . . . V
DD
to V
SS
Operating Conditions (Note 1)
Temperature Range, T
A
. . . . . . . . . . . . . . . . . . . . . . -40
o
C to 85
o
C
Supply Voltage
AV
DD
, AV
SS
, DV
DD
, DV
SS
. . . . . . . . . . . . . . . . +4.75V to +5.25V
|DGND-AGND|. . . . . . . . . . . . . . . . . . . . . . . . . . . . 0mV to 100mV
Reference Input Voltage
V
RB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V and Above
V
RT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8V and Below
Analog Input Range, V
IN
. . . . . . . V
RB
to V
RT
(1.8V
P-P
to 2.8V
P-P
)
Clock Pulse Width
t
PW1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25ns (Min)
t
PW0
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25ns (Min)
Thermal Resistance (Typical, Note 1)
θ
JA
(
o
C/W)
SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . 150
o
C
Maximum Storage Temperature Range, T
STG
. . . . .-65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300
o
C
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications f
C
= 20 MSPS, V
DD
= +5V, V
RB
= 0.5V, V
RT
= 2.5V, T
A
= 25
o
C (Note 1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SYSTEM PERFORMANCE
Offset Voltage ----
E
OT
-60 -35 -10 mV
E
OB
0+15+45mV
Integral Non-Linearity, INL f
C
= 20 MSPS, V
IN
= 0.6V to 2.6V - ±0.5 ±1.3 LSB
Differential Non-Linearity, DNL f
C
= 20 MSPS, V
IN
= 0.6V to 2.6V - ±0.3 ±0.5 LSB
DYNAMIC CHARACTERISTICS
Effective Number of Bits, ENOB f
IN
= 1MHz - 7.6 - Bits
Spurious Free Dynamic Range f
IN
= 1MHz - 51 - dB
Signal to Noise Ratio, SINAD f
C
= 20MHz, f
IN
= 1MHz - 46 - dB
f
C
= 20MHz, f
IN
= 3.58MHz - 46 - dB
Maximum Conversion Speed, f
C
V
IN
= 0.6V to 2.6V, f
IN
= 1kHz Ramp 20 35 - MSPS
Minimum Conversion Speed --0.5MSPS
Differential Gain Error, DG NTSC 40 IRE Mod Ramp, f
C
= 14.3 MSPS - 1.0 - %
Differential Phase Error, DP - 0.5 - Degree
Aperture Jitter, t
AJ
-30-ps
Sampling Delay, t
DS
-4-ns
Data Latency, t
LAT
--2.5Cycles
ANALOG INPUTS
Analog Input Bandwidth (-1dB), BW - 18 - MHz
Analog Input Capacitance, C
IN
V
IN
= 1.5V + 0.07V
RMS
-11-pF
RMS Signal
RMS Noise Distortion+
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HI1175
