NX3DV2567_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 20 January 2014 13 of 19
NXP Semiconductors NX3DV2567-Q100
Low-ohmic four-pole double-throw analog switch
12.2 Additional dynamic characteristics
[1] f
i
is biased at 0.5V
CC
.
12.3 Test circuits
Table 12. Additional dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); V
I
= GND or V
CC
(unless otherwise
specified); t
r
= t
f
2.5 ns; T
amb
= 25
C.
Symbol Parameter Conditions Min Typ Max Unit
Data path switch
f
(3dB)
3 dB frequency
response
R
L
=50; see Figure 16
[1]
V
CC
= 2.7 V to 3.6 V - 330 - MHz
iso
isolation (OFF-state) f
i
=10MHz; R
L
=50; see Figure 17
[1]
V
CC
= 2.7 V to 3.6 V - 60 - dB
Xtalk crosstalk between switches;
f
i
=10MHz;R
L
=50;seeFigure 18
[1]
V
CC
= 2.7 V to 3.6 V - 60 - dB
Q
inj
charge injection f
i
= 1 MHz; C
L
= 0.1 nF; R
L
=1 M; V
gen
=0V;
R
gen
=0; see Figure 19
V
CC
= 2.7 V to 3.6 V - 10 - pC
To obtain 0 dBm level at output, adjust f
i
voltage. Increase f
i
frequency until dB meter reads 3dB.
Fig 16. Test circuit for measuring the frequency response when channel is in ON-state
dB
001aam609
S
nZ
GND
nY0
V
IL
or V
IH
nY1
switch
1
2
Sswitch
V
IL
1
V
IH
2
f
i
R
L
V
CC
0.5V
CC
To obtain 0 dBm level at input, adjust f
i
voltage.
Fig 17. Test circuit for measuring isolation (OFF-state)
dB
001aam610
S
nZ
GND
nY0
V
IL
or V
IH
nY1
switch
1
2
Sswitch
V
IH
1
V
IL
2
f
i
R
L
V
CC
0.5V
CC
R
L
0.5V
CC
