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NX3DV2567HR-Q100X

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
NX3DV2567_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 20 January 2014 4 of 19
NXP Semiconductors NX3DV2567-Q100
Low-ohmic four-pole double-throw analog switch
9. Limiting values
[1] The minimum input voltage rating may be exceeded if the input current rating is observed.
[2] The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed but may not
exceed 4.6 V.
[3] Above 135 C, the value of P
tot
derates linearly with 16.9 mW/K.
10. Recommended operating conditions
[1] To avoid sinking GND current from terminal nZ when switch current flows in terminal nYn, the voltage drop across the bidirectional
switch must not exceed 0.4 V. If the switch current flows into terminal nZ, no GND current flows from terminal nYn. In this case, there is
no limit for the voltage drop across the switch.
[2] Applies to control signal levels.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 0.5 +4.6 V
V
I
input voltage select input S
[1]
0.5 +4.6 V
V
SW
switch voltage
[2]
0.5 V
CC
+ 0.5 V
I
IK
input clamping current V
I
< 0.5 V 50 - mA
I
SK
switch clamping current V
I
< 0.5 V or V
I
>V
CC
+ 0.5 V - 50 mA
I
SW
switch current supply path switch
V
SW
> 0.5 V or V
SW
< V
CC
+ 0.5 V;
source or sink current
- 350 mA
V
SW
> 0.5 V or V
SW
< V
CC
+ 0.5 V;
pulsed at 1 ms duration, < 10 % duty cycle;
peak current
- 500 mA
data path switch
V
SW
> 0.5 V or V
SW
< V
CC
+ 0.5 V;
source or sink current
- 128 mA
T
stg
storage temperature 65 +150 C
P
tot
total power dissipation T
amb
= 40 Cto+125C
[3]
-250mW
Table 6. Recommended operating conditions
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 1.4 4.3 V
V
I
input voltage select input S 0 4.3 V
V
SW
switch voltage
[1]
0V
CC
V
T
amb
ambient temperature 40 +125 C
t/V input transition rise and fall rate V
CC
= 1.4 V to 4.3 V
[2]
- 200 ns/V
NX3DV2567_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 20 January 2014 5 of 19
NXP Semiconductors NX3DV2567-Q100
Low-ohmic four-pole double-throw analog switch
11. Static characteristics
Table 7. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol Parameter Conditions T
amb
= 25 C T
amb
= 40 C to +125 C Unit
Min Typ Max Min Max
(85 C)
Max
(125 C)
V
IH
HIGH-level
input voltage
V
CC
= 1.4 V to 1.6 V 0.9 - - 0.9 - - V
V
CC
= 1.65 V to 1.95 V 0.9 - - 0.9 - - V
V
CC
= 2.3 V to 2.7 V 1.1 - - 1.1 - - V
V
CC
= 2.7 V to 3.6 V 1.3 - - 1.3 - - V
V
CC
= 3.6 V to 4.3 V 1.4 - - 1.4 - - V
V
IL
LOW-level
input voltage
V
CC
= 1.4 V to 1.6 V - - 0.3 - 0.3 0.3 V
V
CC
= 1.65 V to 1.95 V - - 0.4 - 0.4 0.3 V
V
CC
= 2.3 V to 2.7 V - - 0.4 - 0.4 0.4 V
V
CC
= 2.7 V to 3.6 V - - 0.5 - 0.5 0.5 V
V
CC
= 3.6 V to 4.3 V - - 0.6 - 0.6 0.6 V
I
I
input leakage
current
select input S;
V
I
=GNDto4.3V;
V
CC
= 1.4 V to 4.3 V
--- -0.5 1 A
I
S(OFF)
OFF-state
leakage
current
nY0 and nY1 port;
see Figure 4
V
CC
= 1.4 V to 3.6 V - - 5-50 500 nA
V
CC
= 3.6 V to 4.3 V - - 10 - 50 500 nA
I
S(ON)
ON-state
leakage
current
nZ port;
V
CC
= 1.4 V to 3.6 V;
see Figure 5
V
CC
= 1.4 V to 3.6 V - - 5-50 500 nA
V
CC
= 3.6 V to 4.3 V - - 10 - 50 500 nA
I
CC
supply current V
I
=V
CC
or GND;
V
SW
=GNDorV
CC
V
CC
= 3.6 V - - 100 - 500 5000 nA
V
CC
= 4.3 V - - 150 - 800 6000 nA
I
CC
additional
supply current
V
SW
=GNDorV
CC
V
I
= 2.6 V; V
CC
=4.3V - 2.0 4.0 - 7 7 A
V
I
= 2.6 V; V
CC
= 3.6 V - 0.35 0.7 - 1 1 A
V
I
= 1.8 V; V
CC
= 4.3 V - 7.0 10.0 - 15 15 A
V
I
= 1.8 V; V
CC
=3.6V - 2.5 4.0 - 5 5 A
V
I
= 1.8 V; V
CC
= 2.5 V - 50 200 - 300 500 nA
C
I
input
capacitance
-1----pF
C
S(OFF)
OFF-state
capacitance
supply path switch - 35 - - - - pF
data path switch - 3 - - - - pF
C
S(ON)
ON-state
capacitance
supply path switch - 130 - - - - pF
data path switch - 16 - - - - pF
NX3DV2567_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 20 January 2014 6 of 19
NXP Semiconductors NX3DV2567-Q100
Low-ohmic four-pole double-throw analog switch
11.1 Test circuits
11.2 ON resistance
V
I
=0.3VorV
CC
0.3 V; V
O
=V
CC
0.3 V or 0.3 V.
Fig 4. Test circuit for measuring OFF-state leakage current
I
S
001aam599
V
I
V
O
S
nZ
GND
nY0
V
IL
or V
IH
nY1
switch
1
2
Sswitch
V
IH
1
V
IL
2
V
CC
V
I
=0.3VorV
CC
0.3 V; V
O
=V
CC
0.3 V or 0.3 V.
Fig 5. Test circuit for measuring ON-state leakage current
I
S
001aam600
V
I
V
O
S
nZ
GND
nY0
V
IL
or V
IH
nY1
switch
1
2
V
CC
Sswitch
V
IH
1
V
IL
2
Table 8. ON resistance
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 7 to Figure 12.
Symbol Parameter Conditions T
amb
= 40 C to +85 C T
amb
= 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
Supply path switch
R
ON
ON resistance V
I
=GNDtoV
CC
;
I
SW
= 100 mA; see Figure 6
V
CC
=1.8V; V
SW
= 0 V, 1.8 V - 0.5 0.75 - 0.85
V
CC
=2.7V; V
SW
= 0 V, 2.3 V - 0.45 0.7 - 0.8
R
ON
ON resistance
mismatch
between
channels
V
I
=GNDtoV
CC
; I
SW
= 100 mA
[2]
V
CC
=2.7V; V
SW
=0V - 0.1 - - -
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NX3DV2567HR-Q100X

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Manufacturer:
NXP Semiconductors
Description:
Analog Switch ICs Low-ohmic four-pole analog switch
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