NX3DV2567_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 20 January 2014 9 of 19
NXP Semiconductors NX3DV2567-Q100
Low-ohmic four-pole double-throw analog switch
12. Dynamic characteristics
(1) T
amb
= 125 C.
(2) T
amb
=85C.
(3) T
amb
=25C.
(4) T
amb
= 40 C.
(1) T
amb
= 125 C.
(2) T
amb
=85C.
(3) T
amb
=25C.
(4) T
amb
= 40 C.
Fig 11. ON resistance as a function of input voltage;
V
CC
= 1.8 V (data path switch)
Fig 12. ON resistance as a function of input voltage;
V
CC
= 2.7 V (data path switch)
V
I
(V)
0 2.01.60.8 1.20.4
001aam604
9
11
7
13
15
R
ON
(Ω)
5
(1)
(2)
(3)
(4)
V
I
(V)
0321
001aam605
6
8
10
R
ON
(Ω)
4
(1)
(2)
(3)
(4)
Table 9. Dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for load circuit, see Figure 15.
Symbol Parameter Conditions 25 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
(85 C)
Max
(125 C)
Supply path switch
t
en
enable time S to 1Z or 1Y0, 1Y1;
see Figure 13
V
CC
= 1.4 V to 1.6 V - 41 90 - 120 120 ns
V
CC
= 1.65 V to 1.95 V - 30 70 - 80 90 ns
V
CC
= 2.3 V to 2.7 V - 20 45 - 50 55 ns
V
CC
= 2.7 V to 3.6 V - 19 40 - 45 50 ns
V
CC
= 3.6 V to 4.3 V - 19 40 - 45 50 ns
t
dis
disable time S to 1Z or 1Y0, 1Y1;
see Figure 13
V
CC
= 1.4 V to 1.6 V - 24 70 - 80 90 ns
V
CC
= 1.65 V to 1.95 V - 15 55 - 60 65 ns
V
CC
= 2.3 V to 2.7 V - 9 25 - 30 35 ns
V
CC
= 2.7 V to 3.6 V - 8 20 - 25 30 ns
V
CC
= 3.6 V to 4.3 V - 8 20 - 25 30 ns