IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
1. Product profile
1.1 General description
Planar passivated high commutation three quadrant triac in a SOT78 plastic package. The
"series ET" triac balances the requirements of commutation performance and gate
sensitivity. The "sensitive gate" "series ET" is intended for interfacing with low power
drivers including microcontrollers where "high junction operating temperature" capability is
required.
1.2 Features and benefits
3Q technology for improved noise
immunity
Direct interfacing with low power
drivers and microcontrollers
Good immunity to false turn-on by
dV/dt
High commutation capability with
sensitive gate
High junction operating temperature
capability
High voltage capability
Planar passivated for voltage
ruggedness and reliability
Triggering in three quadrants only
1.3 Applications
Applications subject to high
temperature
Electronic thermostats (heating and
cooling)
High power motor controls e.g.
washing machines and vacuum
cleaners
Refrigeration and air-conditioner
compressor controls
1.4 Quick reference data
BTA316-800ET
3Q Hi-Com Triac
Rev. 02 — 1 December 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak
off-state voltage
--800V
I
TSM
non-repetitive
peak on-state
current
full sine wave; T
j(init)
=2C;
t
p
= 20 ms; see Figure 4;
see Figure 5
--140A
T
j
junction
temperature
--150°C
BTA316-800ET All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 December 2010 2 of 14
NXP Semiconductors
BTA316-800ET
3Q Hi-Com Triac
2. Pinning information
3. Ordering information
I
T(RMS)
RMS on-state
current
full sine wave; T
mb
126 °C;
see Figure 3
; see Figure 1;
see Figure 2
--16A
Static characteristics
I
GT
gate trigger
current
V
D
=12V; I
T
= 0.1 A; T2+ G+;
T
j
=2C; see Figure 7
--10mA
V
D
=12V; I
T
= 0.1 A; T2+ G-;
T
j
=2C; see Figure 7
--10mA
V
D
=12V; I
T
= 0.1 A; T2- G-;
T
j
=2C; see Figure 7
--10mA
Table 1. Quick reference data
…continued
Symbol Parameter Conditions Min Typ Max Unit
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1
SOT78 (TO-220AB)
2 T2 main terminal 2
3 G gate
mb T2 mounting base; main terminal 2
12
mb
3
sym051
T1
G
T2
Table 3. Ordering information
Type number Package
Name Description Version
BTA316-800ET TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78

BTA316-800ET,127

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
Triacs 800V 16A +150C
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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