BTA316-800ET All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 December 2010 3 of 14
NXP Semiconductors
BTA316-800ET
3Q Hi-Com Triac
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state voltage - 800 V
I
T(RMS)
RMS on-state current full sine wave; T
mb
≤ 126 °C;
see Figure 3; see Figure 1; see Figure 2
-16A
I
TSM
non-repetitive peak on-state
current
full sine wave; T
j(init)
=25°C;
t
p
= 20 ms; see Figure 4; see Figure 5
- 140 A
full sine wave; T
j(init)
=25°C;
t
p
=16.7ms
- 150 A
I
2
tI
2
t for fusing t
p
= 10 ms; sine-wave pulse - 98 A
2
s
dI
T
/dt rate of rise of on-state current I
T
=20A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs - 100 A/µs
I
GM
peak gate current - 2 A
P
GM
peak gate power - 5 W
P
G(AV)
average gate power over any 20 ms period - 0.5 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 150 °C
Fig 1. RMS on-state current as a function of mounting
base temperature; maximum values
Fig 2. RMS on-state current as a function of surge
duration; maximum values
003aab777
0
4
8
12
16
20
-50 0 50 100 150
T
mb
(°C)
I
T(RMS)
(A)
003aaf674
0
10
20
30
40
50
60
10
−2
10
−1
1 10
surge duration (s)
I
T(RMS)
(A)
