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BTA316-800ET,127

P1-P3P4-P6P7-P9P10-P12P13-P15
BTA316-800ET All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 December 2010 6 of 14
NXP Semiconductors
BTA316-800ET
3Q Hi-Com Triac
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance
from junction to
mounting base
full cycle; see Figure 6 --1.2K/W
half cycle; see Figure 6
--1.7K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air - 60 - K/W
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
003aab776
10
−1
10
−2
1
10
Z
th(j-mb)
(K/W)
10
−3
t
p
(s)
10
−5
11010
−1
10
−2
10
−4
10
−3
t
p
P
t
(2)
(1)
BTA316-800ET All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 December 2010 7 of 14
NXP Semiconductors
BTA316-800ET
3Q Hi-Com Triac
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
GT
gate trigger current V
D
=12V; I
T
= 0.1 A; T2+ G+;
T
j
=25°C; see Figure 7
--10mA
V
D
=12V; I
T
= 0.1 A; T2+ G-;
T
j
=25°C; see Figure 7
--10mA
V
D
=12V; I
T
= 0.1 A; T2- G-;
T
j
=25°C; see Figure 7
--10mA
I
L
latching current V
D
=12V; I
G
= 0.1 A; T2+ G+;
T
j
=25°C; see Figure 8
--25mA
V
D
=12V; I
G
= 0.1 A; T2+ G-;
T
j
=25°C; see Figure 8
--30mA
V
D
=12V; I
G
= 0.1 A; T2- G-;
T
j
=25°C; see Figure 8
--30mA
I
H
holding current V
D
=12V; T
j
=25°C; see Figure 9 --15mA
V
T
on-state voltage I
T
=18A; T
j
= 25 °C; see Figure 10 -1.31.5V
V
GT
gate trigger voltage V
D
=12V; I
T
= 0.1 A; T
j
=25°C;
see Figure 11
-0.81.5V
V
D
=400V; I
T
= 0.1 A; T
j
=150°C;
see Figure 11
0.25 - - V
I
D
off-state current V
D
=800V; T
j
= 150 °C - 0.4 2 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
=536V; T
j
= 150 °C; exponential
waveform; gate open circuit
20--V/µs
dI
com
/dt rate of change of
commutating current
V
D
=400V; T
j
= 150 °C; I
T(RMS)
=16A;
dV
com
/dt = 10 V/µs; gate open circuit
1.2--A/ms
V
D
=400V; T
j
= 150 °C; I
T(RMS)
=16A;
dV
com
/dt = 20 V/µs; "without snubber"
condition; gate open circuit
0.8--A/ms
V
D
400 V; T
j
=150°C; I
T(RMS)
=16A;
dV
com
/dt = 1 V/µs; gate open circuit
6--A/ms
t
gt
gate-controlled turn-on
time
I
TM
=20A; V
D
= 800 V; I
G
=0.1A;
dI
G
/dt = 5 A/µs
-2-µs
BTA316-800ET All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 December 2010 8 of 14
NXP Semiconductors
BTA316-800ET
3Q Hi-Com Triac
Fig 7. Normalized gate trigger current as a function of
junction temperature
Fig 8. Normalized latching current as a function of
junction temperature
V
o
= 1.024 V
R
s
= 0.021 Ω
(1) T
j
= 150 °C; typical values
(2) T
j
= 150 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig 9. Normalized holding current as a function of
junction temperature
Fig 10. On-state current as a function of on-state
voltage
T
j
(°C)
−50 150100050
001aag165
1
2
3
0
(1)
(2)
(3)
I
GT
I
GT(25°C)
T
j
(°C)
−50 150100050
001aag166
1
2
3
0
I
L
I
L(25°C)
T
j
(°C)
−50 150100050
001aag167
1
2
3
0
I
H
I
H(25°C)
003aaf675
0
10
20
30
40
50
0 0.5 1 1.5 2
V
T
(V)
I
T
(A)
(1) (2) (3)
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BTA316-800ET,127

Mfr. #:
Buy BTA316-800ET,127
Manufacturer:
WeEn Semiconductors
Description:
Triacs 800V 16A +150C
Lifecycle:
New from this manufacturer.
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