Nexperia
PMPB20SNA
40 V, N-channel Trench MOSFET
PMPB20SNA All information provided in this document is subject to legal disclaimers.
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Nexperia B.V. 2017. All rights reserved
Preliminary data sheet 19 July 2017 3 / 14
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage - 40 V
V
GS
gate-source voltage
T
j
= 25 °C
-20 20 V
V
GS
= 10 V; T
amb
= 25 °C [1] - 8 AI
D
drain current
V
GS
= 10 V; T
amb
= 100 °C [1] - 5.1 A
I
DM
peak drain current T
amb
= 25 °C; single pulse; t
p
≤ 10 µs - 32 A
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
T
j(init)
= 25 °C; I
D
= 1.35 A; DUT in
avalanche (unclamped)
- 28.4 mJ
T
amb
= 25 °C [1] - 2.27 WP
tot
total power dissipation
T
sp
= 25 °C - 15 W
T
j
junction temperature -55 175 °C
T
amb
ambient temperature -55 175 °C
T
stg
storage temperature -65 175 °C
Source-drain diode
I
S
source current T
amb
= 25 °C [1] - 2.3 A
ESD maximum rating
V
ESD
electrostatic discharge
voltage
HBM [2] - 500 V
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
[2] Measured between all pins.
T
j
(°C)
-75 22512525
aaa-026120
40
80
120
P
der
(%)
0
Fig. 1. Normalized total power dissipation as a
function of junction temperature
T
j
(°C)
-75 22512525
aaa-026121
40
80
120
I
der
(%)
0
Fig. 2. Normalized continuous drain current as a
function of junction temperature
