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BUK7D25-40EX

P1-P3P4-P6P7-P9P10-P12P13-P14
Nexperia
PMPB20SNA
40 V, N-channel Trench MOSFET
PMPB20SNA All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Preliminary data sheet 19 July 2017 7 / 14
V
DS
(V)
0 531 42
aaa-027006
28
I
D
(A)
0
4.5 V
4.8 V
5.0 V
5.5 V
V
GS
= 10 V
7.5 V
6.0 V
4
8
12
16
20
24
T
j
= 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
aaa-027007
V
GS
(V)
1 3 4 52
10
-4
10
-5
10
-3
I
D
(A)
10
-6
maxmin typ
V
DS
= 5 V; T
j
= 25 °C
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
I
D
(A)
0 28
aaa-027008
120
R
DSon
(mΩ)
0
20
40
60
80
100
4.5 V 4.8 V 5.0 V 5.5 V
V
GS
= 10 V
6.0 V
7.5 V
4 8 12 16 20 24
T
j
= 25 °C
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
V
GS
(V)
0 4 8 12 16 20
aaa-027009
120
R
DSon
0
T
j
= 175 °C
T
j
= 25 °C
20
40
60
80
100
I
D
= 7 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Nexperia
PMPB20SNA
40 V, N-channel Trench MOSFET
PMPB20SNA All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Preliminary data sheet 19 July 2017 8 / 14
V
GS
(V)
0 8642
aaa-027010
28
I
D
(A)
0
T
j
= 175 °C T
j
= 25 °C
4
8
12
16
20
24
V
DS
> I
D
x R
DSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
(°C)
-60 1801200 60
aaa-027011
2.0
a
0
0.5
1.0
1.5
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
T
j
(°C)
-60 1801200 60
aaa-027012
5
V
GS(th)
(V)
0
max
typ
min
1
2
3
4
I
D
= 250 μA; V
DS
= V
GS
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
V
DS
(V)
10
-1
10
2
101
aaa-027013
10
3
C
(pF)
10
10
2
C
iss
C
oss
C
rss
f = 1 MHz; V
GS
= 0 V
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Nexperia
PMPB20SNA
40 V, N-channel Trench MOSFET
PMPB20SNA All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Preliminary data sheet 19 July 2017 9 / 14
Q
G
(nC)
0 8 104 62
aaa-027014
4
6
2
8
10
V
GS
(V)
0
V
DS
= 20 V; I
D
= 7 A; T
amb
= 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
Fig. 15. Gate charge waveform definitions
V
SD
(V)
0 1.20.80.4
aaa-027015
10
I
S
(A)
0
T
j
= 175 °C T
j
= 25 °C
2
4
6
8
V
GS
= 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
P1-P3P4-P6P7-P9P10-P12P13-P14

BUK7D25-40EX

Mfr. #:
Buy BUK7D25-40EX
Manufacturer:
Nexperia
Description:
MOSFET BUK7D25-40E/SOT1220 SOT1220
Lifecycle:
New from this manufacturer.
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