Nexperia
PMPB20SNA
40 V, N-channel Trench MOSFET
PMPB20SNA All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Preliminary data sheet 19 July 2017 4 / 14
aaa-027005
V
DS
(V)
10
-1
10
2
101
10
2
I
D
(A)
10
-2
10
-1
1
10
DC; T
sp
= 25 °C
DC; T
amb
= 25 °C; 6 cm
2
t
p
= 10 µs
100 µs
1 ms
10 ms
100 ms
Limit R
DSon
= V
DS
/I
D
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
Nexperia
PMPB20SNA
40 V, N-channel Trench MOSFET
PMPB20SNA All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Preliminary data sheet 19 July 2017 5 / 14
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - 223 256 K/WR
th(j-a)
thermal resistance
from junction to
ambient
in free air
[2] - 57 66 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
- 5 10 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
aaa-026869
t
p
(s)
10
-3
10
3
10
2
10110
-1
10
-2
10
3
Z
th(j-a)
(K/W)
1
10
10
2
duty cycle = 1
0.02
0.01
0
0.5
0.75
0.33
0.25
0.2
0.1
0.05
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-026870
t
p
(s)
10
-3
10
3
10
2
10110
-1
10
-2
10
2
10
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.02
0.01
0
0.05
0.1
0.2
0.25
0.33
0.5
0.75
FR4 PCB, mounting pad for drain 6 cm
2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Nexperia
PMPB20SNA
40 V, N-channel Trench MOSFET
PMPB20SNA All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Preliminary data sheet 19 July 2017 6 / 14
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C 40 - - V
V
GSth
gate-source threshold
voltage
I
D
= 250 µA; V
DS
= V
GS
; T
j
= 25 °C 2.4 3 4 V
I
DSS
drain leakage current V
DS
= 40 V; V
GS
= 0 V; T
j
= 25 °C - - 1 µA
V
GS
= 15 V; V
DS
= 0 V; T
j
= 25 °C - - 100 nAI
GSS
gate leakage current
V
GS
= -15 V; V
DS
= 0 V; T
j
= 25 °C - - -100 nA
V
GS
= 10 V; I
D
= 8 A; T
j
= 25 °C - 18 25 R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 8 A; T
j
= 175 °C - 33 46
g
fs
forward
transconductance
V
DS
= 10 V; I
D
= 8 A; T
j
= 25 °C - 26 - S
R
G
gate resistance f = 1 MHz - 1.7 - Ω
Dynamic characteristics
Q
G(tot)
total gate charge - 8.6 13 nC
Q
GS
gate-source charge - 1.8 - nC
Q
GD
gate-drain charge
V
DS
= 20 V; I
D
= 7 A; V
GS
= 10 V;
T
j
= 25 °C
- 2.6 - nC
C
iss
input capacitance - 460 - pF
C
oss
output capacitance - 105 - pF
C
rss
reverse transfer
capacitance
V
DS
= 20 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
- 64 - pF
t
d(on)
turn-on delay time - 3 - ns
t
r
rise time - 6 - ns
t
d(off)
turn-off delay time - 8 - ns
t
f
fall time
V
DS
= 20 V; I
D
= 7 A; V
GS
= 10 V;
R
G(ext)
= 6 Ω; T
j
= 25 °C
- 4 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= 2.3 A; V
GS
= 0 V; T
j
= 25 °C - 0.8 1.2 V
t
rr
reverse recovery time - 14.3 - ns
Q
r
recovered charge
I
S
= 2.3 A; dI
S
/dt = -100 A/µs;
V
GS
= 0 V; V
DS
= 20 V; T
j
= 25 °C
- 6.1 - nC

BUK7D25-40EX

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET BUK7D25-40E/SOT1220 SOT1220
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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