10 W, GaN Power Amplifier,
Data Sheet
Rev. A Document Feedback
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FEATURES
High saturated output power (P
SAT
): 41.5 dBm typical
High small signal gain: 35 dB typical
High power gain for saturated output power: 25.5 dB typical
Bandwidth: 2.7 GHz to 3.8 GHz
High power added efficiency (PAE): 54% typical
High output IP3: 44 dBm typical
Supply voltage: V
DD
= 28 V at 150 mA
32-lead, 5 mm × 5 mm LFCSP_CAV package
APPLICATIONS
Extended battery operation for public mobile radios
Power amplifier stage for wireless infrastructure
Test and measurement equipment
Commercial and military radars
General-purpose transmitter amplification
FUNCTIONAL BLOCK DIAGRAM
17
1
3
4
2
9
GND
GND
GND
RFIN
5
6
RFIN
GND
7
GND
8
GND
GND
18
GND
19
GND
20
RFOUT
21
RFOUT
22
GND
23
GND
24
GND
GND
12
GND
11
GND
10
V
GG1
13
V
GG2
14
GND
15
GND
16
GND
25
GND
26
V
DD2
27
V
DD2
28
GND
29
GND
30
V
DD1
31
GND
32
GND
HMC1114
13530-001
PACKAGE
BASE
Figure 1.
GENERAL DESCRIPTION
The HMC1114 is a gallium nitride (GaN), broadband power
amplifier, delivering 10 W with more than 50% power added
efficiency (PAE) across a bandwidth of 2.7 GHz to 3.8 GHz. The
HMC1114 provides ±0.5 dB gain flatness.
The HMC1114 is ideal for pulsed or continuous wave (CW)
applications such as wireless infrastructure, radar, public mobile
radio, and general-purpose amplification.
The HMC1114 is housed in a compact LFCSP_CAV package.
