Data Sheet HMC1114
Rev. A | Page 13 of 15
APPLICATIONS INFORMATION
Figure 41 shows the basic connections for operating the HMC1114.
The RFIN port is dc-coupled. An appropriate valued external dc
block capacitor is required at RFIN port. The RFOUT port has
on-chip dc block capacitors that eliminate the need for external ac
coupling capacitors.
RECOMMENDED BIAS SEQUENCE
During Power-Up
The recommended bias sequence during power-up is the
following:
1. Connect to ground.
2. Set V
GG1
and V
GG2
to − 8 V.
3. Set V
DD1
and V
DD2
to 28 V.
4. Increase V
GG1
and V
GG2
to achieve a typical I
DQ
= 150 mA.
5. Apply the RF signal.
During Power-Down
The recommended bias sequence during power-down is the
following:
1. Turn off the RF signal.
2. Decrease V
GG1
to −8 V to achieve a typical I
DQ
= 0 mA.
3. Decrease V
DD1
and V
DD2
t o 0 V.
4. Increase V
GG1
to 0 V.
Unless otherwise noted, all measurements and data shown were
taken using the typical application circuit (see Figure 41) on the
evaluation board (see Figure 42) and biased per the conditions
in the Recommended Bias Sequence section. The V
DD1
and two
V
DD2
pins are connected together. Similarly, the V
GG1
and V
GG2
pins are also connected together. The bias conditions shown in
the Recommended Bias Sequence section are the operating
points recommended to optimize the overall performance.
Operation using other bias conditions may provide performance
that differs from what is in Table 1 and Table 2. Increasing the
V
DD1
and V
DD2
levels typically increase gain and P
SAT
at the
expense of power consumption. This behavior is seen in the
Typical Performance Characteristics section. For applications
where the P
SAT
requirement is not stringent, reduce the V
DD1
and
the V
DD2
of the HMC1114 to improve power consumption. To
obtain the best performance while not damaging the device,
follow the recommended biasing sequence outlined in the
Recommended Bias Sequence section.
TYPICAL APPLICATION CIRCUIT
17
1
3
4
2
9
5
6
7
8
18
19
20
21
22
23
24
12
11
10
13
14
15
16
25
26
27
28
29
30
31
32
C2
1000pF
V
DD1
, V
DD2
V
GG1
, V
GG2
RFIN RFOUT
C3
1µF
C8
10µF
C6
10µF
C4
1µF
C9
10µF
C5
1µF
C10
10µF
C7
10µF
C1
1000pF
13530-040
HMC1114
Figure 41. Typical Application Circuit
