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BFG520W,115

P1-P3P4-P6P7-P9P10-P12P13-P15
NXP Semiconductors Product specification
NPN 9 GHz wideband transistors BFG520W; BFG520W/X
Fig.18 Common emitter input reflection coefficient (S
11
); typical values.
handbook, full pagewidth
MLB814
00
o
0.2
0.6
0.4
0.8
1.0
1.0
45
o
90
o
135
o
180
o
45
o
90
o
135
o
5
2
1
0.5
0.5
1
2
5
52
0.2
1
0
3 GHz
0.2
0.2
0.5
40 MHz
V
CE
= 6 V; I
C
= 20 mA; Z
o
=50Ω.
Fig.19 Common emitter forward transmission coefficient (S
21
); typical values.
handbook, full pagewidth
MLB815
0
o
90
o
135
o
180
o
90
o
50 40 30 20 10
45
o
135
o
45
o
40 MHz
3 GHz
V
CE
= 6 V; I
C
= 20 mA.
Rev. 04 - 21 November 2007
10 of 15
NXP Semiconductors Product specification
NPN 9 GHz wideband transistors BFG520W; BFG520W/X
V
CE
= 6 V; I
C
= 20 mA.
Fig.20 Common emitter reverse transmission coefficient (S
12
); typical values.
handbook, full pagewidth
MLB816
0
o
90
o
135
o
180
o
90
o
0.25 0.20 0.15 0.10 0.05
45
o
135
o
45
o
40 MHz
3 GHz
Fig.21 Common emitter output reflection coefficient (S
22
); typical values.
handbook, full pagewidth
MLB817
00
o
0.2
0.6
0.4
0.8
1.0
1.0
45
o
90
o
135
o
180
o
45
o
90
o
135
o
5
2
1
0.5
0.5
1
2
5
52
0.2
1
0
3 GHz
0.2
0.2
0.5
40 MHz
V
CE
= 6 V; I
C
= 20 mA; Z
o
=50Ω.
Rev. 04 - 21 November 2007
11 of 15
NXP Semiconductors Product specification
NPN 9 GHz wideband transistors BFG520W; BFG520W/X
SPICE parameters for the BFG520W die
SEQUENCE No. PARAMETER VALUE UNIT
1 IS 1.016 fA
2 BF 220.1 −
3 NF 1.000 −
4 VAF 48.06 V
5 IKF 510 mA
6 ISE 283 fA
7 NE 2.035 −
8 BR 100.7 −
9 NR 0.988 −
10 VAR 1.692 V
11 IKR 2.352 mA
12 ISC 24.48 aA
13 NC 1.022 −
14 RB 10.00 Ω
15 IRB 1.000 µA
16 RBM 10.00 Ω
17 RE 775.3 mΩ
18 RC 2.210 Ω
19
(1)
XTB 0.000 −
20
(1)
EG 1.110 eV
21
(1)
XTI 3.000 −
22 CJE 1.245 pF
23 VJE 600.0 mV
24 MJE 0.258 −
25 TF 8.616 ps
26 XTF 6.788 −
27 VTF 1.414 V
28 ITF 110.3 mA
29 PTF 45.01 deg
30 CJC 447.6 fF
31 VJC 189.2 mV
32 MJC 0.070 −
33 XCJC 0.130 −
34 TR 543.7 ps
35
(1)
CJS 0.000 F
Note
1. These parameters have not been extracted, the
default values are shown.
List of components (see Fig.22)
36
(1)
VJS 750.0 mV
37
(1)
MJS 0.000 −
38 FC 0.780 −
DESIGNATION VALUE UNIT
C
be
70 fF
C
cb
50 fF
C
ce
115 fF
L1 0.34 nH
L2 0.10 nH
L3 0.25 nH
L
B
0.40 nH
L
E
0.40 nH
SEQUENCE No. PARAMETER VALUE UNIT
QL
B
= 50; QL
E
= 50; QL
B,E
(f)=QL
B,E
√(f/f
c
)
f
c
= scaling frequency = 1 GHz.
Fig.22 Package equivalent circuit SOT343N.
handbook, halfpage
MBC964
B
E
CB' C'
E'
L
B
L
E
L3
L1 L2
C
cb
C
be ce
C
Rev. 04 - 21 November 2007
12 of 15
P1-P3P4-P6P7-P9P10-P12P13-P15

BFG520W,115

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Buy BFG520W,115
Manufacturer:
NXP Semiconductors
Description:
RF TRANS NPN 15V 9GHZ 4SO
Lifecycle:
New from this manufacturer.
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