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BFG520W,115

P1-P3P4-P6P7-P9P10-P12P13-P15
NXP Semiconductors Product specification
NPN 9 GHz wideband transistors BFG520W; BFG520W/X
Fig.10 Intermodulation distortion as a function
of collector current; typical values.
V
o
= 275 mV; f
p
+f
q
−f
r
= 793.25 MHz; V
CE
=6V;
R
L
=75Ω; T
amb
=25°C.
handbook, halfpage
MLB818
(dB)
01020 40
40
30
50
60
70
30
d
im
I (mA)
C
Fig.11 Second order intermodulation distortion as a
function of collector current; typical values.
V
o
= 75 mV; f
p
+f
q
= 810 MHz; V
CE
=6V;
R
L
=75Ω T
amb
=25°C.
handbook, halfpage
MLB819
(dB)
01020 40
40
30
50
60
70
30
d
2
I (mA)
C
Fig.12 Minimum noise figure as a function
of collector current; typical values.
V
CE
=6V.
handbook, halfpage
MLB820
2
4
3
1
2
0
10101
F
(dB)
I (mA)
C
1000 MHz
f = 2000 MHz
500 MHz
900 MHz
Fig.13 Associated available gain as a function
of collector current; typical values.
V
CE
=6V.
handbook, halfpage
MLB821
2
20
15
5
10
0
10101
G
(dB)
I (mA)
C
ass
f = 900 MHz
1000 MHz
2000 MHz
Rev. 04 - 21 November 2007
7 of 15
NXP Semiconductors Product specification
NPN 9 GHz wideband transistors BFG520W; BFG520W/X
Fig.14 Minimum noise figure as a function of
frequency; typical values.
V
CE
=6V.
handbook, halfpage
MLB822
4
3
1
2
0
F
(dB)
4
10
3
10
2
10
f (MHz)
20 mA
I =
C
5 mA
Fig.15 Associated available gain as a function
of frequency; typical values.
V
CE
=6V.
handbook, halfpage
MLB823
4
15
10
0
5
10
3
10
2
10
20
G
(dB)
f (MHz)
ass
20 mAI = 5 mA
C
Rev. 04 - 21 November 2007
8 of 15
NXP Semiconductors Product specification
NPN 9 GHz wideband transistors BFG520W; BFG520W/X
Fig.16 Common emitter noise figure circles; typical values.
handbook, full pagewidth
MLB824
00
o
0.2
0.6
0.4
0.8
1.0
1.0
45
o
90
o
135
o
180
o
45
o
90
o
135
o
5
2
1
0
0.2
0.5
1
2
5
0.2
unstable
region
F = 1.5 dB
F = 2 dB
F = 3 dB
min
opt
Γ
F = 1.1 dB
0.2
0.5
0.5
1 2 5
stability
circle
f = 900 MHz; V
CE
= 6 V; I
C
= 5 mA; Z
o
=50Ω.
Fig.17 Common emitter noise figure circles; typical values.
handbook, full pagewidth
MLB825
00
o
0.2
0.6
0.4
0.8
1.0
1.0
45
o
90
o
135
o
180
o
45
o
90
o
135
o
5
2
1
0.5
0.5
1
2
5
52
0
0.2
0.2
0.2
0.5
1
(1)
(2)
(5)
(6)
(7)
(8)
(3)
(4)
f = 2 GHz; V
CE
= 6 V; I
C
= 5 mA; Z
o
=50Ω.
(1) Γ
opt
; F
min
= 1.85 dB.
(2) F = 2 dB.
(3) F = 2.5 dB.
(4) F = 3 dB.
(5) Γ
ms
;G
max
= 11.8 dB.
(6) G = 11 dB.
(7) G = 10 dB.
(8) G = 9 dB.
Rev. 04 - 21 November 2007
9 of 15
P1-P3P4-P6P7-P9P10-P12P13-P15

BFG520W,115

Mfr. #:
Buy BFG520W,115
Manufacturer:
NXP Semiconductors
Description:
RF TRANS NPN 15V 9GHZ 4SO
Lifecycle:
New from this manufacturer.
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