NXP Semiconductors Product specification
NPN 9 GHz wideband transistors BFG520W; BFG520W/X
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero.
2. I
C
= 20 mA; V
CE
=6V; R
L
=50; T
amb
=25°C;
f
p
= 900 MHz; f
q
= 902 MHz; measured at 2f
p
f
q
= 898 MHz and 2f
q
f
p
= 904 MHz.
3. d
im
= 60 dB (DIN45004B); I
C
= 20 mA; V
CE
=6V; V
p
=V
o
; V
q
=V
o
6 dB; V
r
=V
o
6 dB; R
L
=75;
f
p
= 795.25 MHz; f
q
= 803.25 MHz; f
r
= 805.25 MHz; measured at f
p
+f
q
f
r
= 793.25 MHz.
4. I
C
= 20 mA; V
CE
=6V; V
o
=75mV; R
L
=75; T
amb
=25°C;
f
p
= 250 MHz; f
q
= 560 MHz; measured at f
p
+f
q
= 810 MHz.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
collector-base breakdown voltage I
C
=10 µA; I
E
=0 20 −−V
V
(BR)CES
collector-emitter breakdown voltage I
C
=10µA; R
BE
=0 15 −−V
V
(BR)EBO
emitter-base breakdown voltage I
E
=10µA; I
C
= 0 2.5 −−V
I
CBO
collector leakage current V
CB
=6V; I
E
=0 −−50 nA
h
FE
DC current gain I
C
= 20 mA; V
CE
= 6 V; see Fig.3 60 120 250
C
re
feedback capacitance I
C
= 0; V
CB
= 6 V; f = 1 MHz;
see Fig.4
0.35 pF
f
T
transition frequency I
C
= 20 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
=25°C; see Fig.5
9 GHz
G
UM
maximum unilateral power gain;
note 1
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
=25°C
17 dB
I
C
= 20 mA; V
CE
= 6 V; f = 2 GHz;
T
amb
=25°C
11 dB
|S
21
|
2
insertion power gain I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
=25°C
16 17 dB
F noise figure Γ
s
opt
; I
C
= 5 mA; V
CE
=6V;
f = 900 MHz
1.1 1.6 dB
Γ
s
opt
; I
C
= 20 mA; V
CE
=6V;
f = 900 MHz
1.6 2.1 dB
Γ
s
opt
; I
C
= 5 mA; V
CE
=6V;
f = 2 GHz
1.85 dB
P
L1
output power at 1 dB gain
compression
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
R
L
=50; T
amb
=25°C
17 dBm
ITO third order intercept point note 2 26 dBm
V
o
output voltage note 3 275 mV
d
2
second order intermodulation
distortion
note 4 −−50 dB
G
UM
10
S
21
2
1S
11
2
()1S
22
2
()
--------------------------------------------------------------
dB.log=
Rev. 04 - 21 November 2007
4 of 15
NXP Semiconductors Product specification
NPN 9 GHz wideband transistors BFG520W; BFG520W/X
V
CE
=6V.
Fig.3 DC current gain as a function of collector
current; typical values.
handbook, halfpage
150
0
50
100
10
1
MLB807
11010
2
I (mA)
C
FE
h
I
C
= 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
MLB808
0
0.6
0.4
0.2
0
2.5 5 7.5 10
V (V)
CB
C
re
(pF)
Fig.5 Transition frequency as a function of
collector current; typical values.
f = 1 GHz; T
amb
=25°C.
handbook, halfpage
8
4
0
MLB809
12
f
(GHz)
10
2
101
T
I (mA)
C
V =
CE
3 V
6 V
Rev. 04 - 21 November 2007
5 of 15
NXP Semiconductors Product specification
NPN 9 GHz wideband transistors BFG520W; BFG520W/X
f = 900 MHz; V
CE
=6V.
Fig.6 Gain as a function of collector current;
typical values.
handbook, halfpage
0
30
20
10
0
10 20 40
MLB810
30
gain
(dB)
I (mA)
C
G
MSG
UM
G
max
f = 2 GHz; V
CE
=6V.
Fig.7 Gain as a function of collector current;
typical values.
handbook, halfpage
0
30
20
10
0
10 20 40
MLB811
30
gain
(dB)
I (mA)
C
MSG
UM
G
max
G
I
C
= 5 mA; V
CE
=6V.
Fig.8 Gain as a function of frequency;
typical values.
handbook, halfpage
50
0
10
MLB812
10
2
10
3
10
4
10
20
30
40
(dB)
f (MHz)
gain
G
max
G
UM
MSG
Fig.9 Gain as a function of frequency;
typical values.
I
C
= 20 mA; V
CE
=6V.
handbook, halfpage
50
0
10
MLB813
10
2
10
3
10
4
10
20
30
40
(dB)
f (MHz)
gain
G
max
G
UM
MSG
Rev. 04 - 21 November 2007
6 of 15

BFG520W,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RF TRANS NPN 15V 9GHZ 4SO
Lifecycle:
New from this manufacturer.
Delivery:
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