NXP Semiconductors Product specification
NPN 9 GHz wideband transistors BFG520W; BFG520W/X
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero.
2. I
C
= 20 mA; V
CE
=6V; R
L
=50Ω; T
amb
=25°C;
f
p
= 900 MHz; f
q
= 902 MHz; measured at 2f
p
− f
q
= 898 MHz and 2f
q
− f
p
= 904 MHz.
3. d
im
= −60 dB (DIN45004B); I
C
= 20 mA; V
CE
=6V; V
p
=V
o
; V
q
=V
o
−6 dB; V
r
=V
o
−6 dB; R
L
=75Ω;
f
p
= 795.25 MHz; f
q
= 803.25 MHz; f
r
= 805.25 MHz; measured at f
p
+f
q
−f
r
= 793.25 MHz.
4. I
C
= 20 mA; V
CE
=6V; V
o
=75mV; R
L
=75Ω; T
amb
=25°C;
f
p
= 250 MHz; f
q
= 560 MHz; measured at f
p
+f
q
= 810 MHz.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
collector-base breakdown voltage I
C
=10 µA; I
E
=0 20 −−V
V
(BR)CES
collector-emitter breakdown voltage I
C
=10µA; R
BE
=0 15 −−V
V
(BR)EBO
emitter-base breakdown voltage I
E
=10µA; I
C
= 0 2.5 −−V
I
CBO
collector leakage current V
CB
=6V; I
E
=0 −−50 nA
h
FE
DC current gain I
C
= 20 mA; V
CE
= 6 V; see Fig.3 60 120 250
C
re
feedback capacitance I
C
= 0; V
CB
= 6 V; f = 1 MHz;
see Fig.4
− 0.35 − pF
f
T
transition frequency I
C
= 20 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
=25°C; see Fig.5
− 9 − GHz
G
UM
maximum unilateral power gain;
note 1
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
=25°C
− 17 − dB
I
C
= 20 mA; V
CE
= 6 V; f = 2 GHz;
T
amb
=25°C
− 11 − dB
|S
21
|
2
insertion power gain I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
=25°C
16 17 − dB
F noise figure Γ
s
=Γ
opt
; I
C
= 5 mA; V
CE
=6V;
f = 900 MHz
− 1.1 1.6 dB
Γ
s
=Γ
opt
; I
C
= 20 mA; V
CE
=6V;
f = 900 MHz
− 1.6 2.1 dB
Γ
s
=Γ
opt
; I
C
= 5 mA; V
CE
=6V;
f = 2 GHz
− 1.85 − dB
P
L1
output power at 1 dB gain
compression
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
R
L
=50Ω; T
amb
=25°C
− 17 − dBm
ITO third order intercept point note 2 − 26 − dBm
V
o
output voltage note 3 − 275 − mV
d
2
second order intermodulation
distortion
note 4 −−50 − dB
G
UM
10
S
21
2
1S
11
2
–()1S
22
2
–()
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dB.log=
Rev. 04 - 21 November 2007