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MTA18ASF2G72PZ-2G9E1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR4 component data sheets.
Component specifications are available at micron.com. Module speed grades correlate
with component speed grades, as shown below.
Table 12: Module and Component Speed Grades
DDR4 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G6 -075
-2G4 -083E
-2G3 -083
-2G1 -093E
-1G9 -107E
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level. Mi-
cron encourages designers to simulate the signal characteristics of the system's memo-
ry bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the edge connector of the module, not at the DRAM.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
16GB (x72, ECC, SR) 288-Pin DDR4 RDIMM
DRAM Operating Conditions
09005aef8630c9f3
asf18c2gx72pz.pdf - Rev. D 8/16 EN
16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 13: DDR4 I
DD
Specifications and Conditions – 16GB (Die Revision A)
Values are for the MT40A2G4 DDR4 SDRAM only and are computed from values specified in the 8Gb (2 Gig x 4) compo-
nent data sheet
Parameter Symbol 2400 Units
One bank ACTIVATE-PRECHARGE current I
DD0
1080 mA
One bank ACTIVATE-PRECHARGE, wordline boost, I
PP
current I
PP0
54 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
1350 mA
Precharge standby current I
DD2N
900 mA
Precharge standby ODT current I
DD2NT
1080 mA
Precharge power-down current I
DD2P
540 mA
Precharge quiet standby current I
DD2Q
810 mA
Active standby current I
DD3N
990 mA
Active standby I
PP
current I
PP3N
54 mA
Active power-down current I
DD3P
720 mA
Burst read current I
DD4R
2610 mA
Burst write current I
DD4W
2610 mA
Burst refresh current (1x REF) I
DD5B
4050 mA
Burst refresh I
PP
current (1x REF) I
PP5B
540 mA
Self refresh current: Normal temperature range (0°C to 85°C) I
DD6N
540 mA
Self refresh current: Extended temperature range (0°C to 95°C) I
DD6E
630 mA
Self refresh current: Reduced temperature range (0°C to 45°C) I
DD6R
450 mA
Auto self refresh current (25°C) I
DD6A
360 mA
Auto self refresh current (45°C) I
DD6A
450 mA
Auto self refresh current (75°C) I
DD6A
630 mA
Bank interleave read current I
DD7
3420 mA
Bank interleave read I
PP
current I
PP7
270 mA
Maximum power-down current I
DD8
360 mA
16GB (x72, ECC, SR) 288-Pin DDR4 RDIMM
I
DD
Specifications
09005aef8630c9f3
asf18c2gx72pz.pdf - Rev. D 8/16 EN
17
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Table 14: DDR4 I
DD
Specifications and Conditions – 16GB (Die Revision B)
Values are for the MT40A2G4 DDR4 SDRAM only and are computed from values specified in the 8Gb (2 Gig x 4) compo-
nent data sheet
Parameter Symbol 2666 2400 Units
One bank ACTIVATE-PRECHARGE current I
DD0
828 744 mA
One bank ACTIVATE-PRECHARGE, wordline boost, I
PP
current I
PP0
54 54 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
1044 990 mA
Precharge standby current I
DD2N
630 612 mA
Precharge standby ODT current I
DD2NT
900 900 mA
Precharge power-down current I
DD2P
450 450 mA
Precharge quiet standby current I
DD2Q
540 540 mA
Active standby current I
DD3N
738 684 mA
Active standby I
PP
current I
PP3N
54 54 mA
Active power-down current I
DD3P
612 576 mA
Burst read current I
DD4R
2178 1980 mA
Burst write current I
DD4W
2016 1854 mA
Burst refresh current (1x REF) I
DD5B
4500 4500 mA
Burst refresh I
PP
current (1x REF) I
PP5B
504 504 mA
Self refresh current: Normal temperature range (0°C to 85°C) I
DD6N
540 540 mA
Self refresh current: Extended temperature range (0°C to 95°C) I
DD6E
630 630 mA
Self refresh current: Reduced temperature range (0°C to 45°C) I
DD6R
360 360 mA
Auto self refresh current (25°C) I
DD6A
154.8 154.8 mA
Auto self refresh current (45°C) I
DD6A
360 360 mA
Auto self refresh current (75°C) I
DD6A
540 540 mA
Bank interleave read current I
DD7
2700 2610 mA
Bank interleave read I
PP
current I
PP7
270 270 mA
Maximum power-down current I
DD8
450 450 mA
16GB (x72, ECC, SR) 288-Pin DDR4 RDIMM
I
DD
Specifications
09005aef8630c9f3
asf18c2gx72pz.pdf - Rev. D 8/16 EN
18
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22

MTA18ASF2G72PZ-2G9E1

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Buy MTA18ASF2G72PZ-2G9E1
Manufacturer:
Micron
Description:
Memory Modules DDR4 16GB RDIMM
Lifecycle:
New from this manufacturer.
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