Table 15: DDR4 I
DD
Specifications and Conditions – 16GB (Die Revision D)
Values are for the MT40A2G4 DDR4 SDRAM only and are computed from values specified in the 8Gb (2 Gig x 4) compo-
nent data sheet
Parameter Symbol 2666 Units
One bank ACTIVATE-PRECHARGE current I
DD0
828 mA
One bank ACTIVATE-PRECHARGE, wordline boost, I
PP
current I
PP0
54 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
1044 mA
Precharge standby current I
DD2N
630 mA
Precharge standby ODT current I
DD2NT
900 mA
Precharge power-down current I
DD2P
450 mA
Precharge quiet standby current I
DD2Q
540 mA
Active standby current I
DD3N
828 mA
Active standby I
PP
current I
PP3N
54 mA
Active power-down current I
DD3P
612 mA
Burst read current I
DD4R
2178 mA
Burst write current I
DD4W
2106 mA
Burst refresh current (1x REF) I
DD5B
4644 mA
Burst refresh I
PP
current (1x REF) I
PP5B
504 mA
Self refresh current: Normal temperature range (0°C to 85°C) I
DD6N
558 mA
Self refresh current: Extended temperature range (0°C to 95°C) I
DD6E
648 mA
Self refresh current: Reduced temperature range (0°C to 45°C) I
DD6R
378 mA
Auto self refresh current (25°C) I
DD6A
154.8 mA
Auto self refresh current (45°C) I
DD6A
378 mA
Auto self refresh current (75°C) I
DD6A
558 mA
Bank interleave read current I
DD7
3600 mA
Bank interleave read I
PP
current I
PP7
324 mA
Maximum power-down current I
DD8
450 mA
16GB (x72, ECC, SR) 288-Pin DDR4 RDIMM
I
DD
Specifications
09005aef8630c9f3
asf18c2gx72pz.pdf - Rev. D 8/16 EN
19
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Registering Clock Driver Specifications
Table 16: Registering Clock Driver Electrical Characteristics
DDR4 RCD01 devices or equivalent
Parameter Symbol Pins Min Nom Max Units
DC supply voltage V
DD
1.14 1.2 1.26 V
DC reference voltage V
REF
V
REFCA
0.49 × V
DD
0.5 × V
DD
0.51 × V
DD
V
DC termination
voltage
V
TT
V
REF
- 40mV V
REF
V
REF
+ 40mV V
High-level input
voltage
V
IH. CMOS
DRST_n 0.65 × V
DD
V
DD
V
Low-level input
voltage
V
IL. CMOS
0 0.35 × V
DD
V
DRST_n pulse width
t
IN-
IT_Pow-
er_stable
1.0 µs
AC high-level output
voltage
V
OH(AC)
All outputs except
ALERT_n
V
TT
+ (0.15 × V
DD
) V
AC low-level output
voltage
V
OL(AC)
V
TT
+ (0.15 x V
DD
) V
AC differential out-
put high measure-
ment level (for out-
put slew rate)
V
OHdiff(AC)
Yn_t - Yn_c, BCK_t -
BCK_c
0.3 × V
DD
mV
AC differential out-
put low measure-
ment level (for out-
put slew rate)
V
OLdiff(AC)
–0.3 × V
DD
mV
Note:
1. Timing and switching specifications for the register listed are critical for proper opera-
tion of DDR4 SDRAM RDIMMs. These are meant to be a subset of the parameters for the
specific device used on the module. See the JEDEC RCD01 specification for complete op-
erating electrical characteristics. Registering clock driver parametric values are specified
for device default control word settings, unless otherwise stated. The RC0A control
word setting does not affect parametric values.
16GB (x72, ECC, SR) 288-Pin DDR4 RDIMM
Registering Clock Driver Specifications
09005aef8630c9f3
asf18c2gx72pz.pdf - Rev. D 8/16 EN
20
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Temperature Sensor with SPD EEPROM
The temperature sensor continuously monitors the module's temperature and can be
read back at any time over the I
2
C bus shared with the serial presence-detect (SPD) EE-
PROM. Refer to JEDEC JC-42.4 EE1004 and TSE2004 device specifications for complete
details.
SPD Data
For the latest SPD data, refer to Micron's SPD page: micron.com/SPD.
Table 17: Temperature Sensor with SPD EEPROM Operating Conditions
Parameter/Condition Symbol Min Nom Max Units
Supply voltage V
DDSPD
2.5 V
Input low voltage: logic 0; all inputs V
IL
–0.5 V
DDSPD
× 0.3 V
Input high voltage: logic 1; all inputs V
IH
V
DDSPD
× 0.7 V
DDSPD
+ 0.5 V
Output low voltage: 3mA sink current V
DDSPD
> 2V V
OL
0.4 V
Input leakage current: (SCL, SDA) V
IN
= V
DDSPD
or V
SSSPD
I
LI
±5 µA
Output leakage current: V
OUT
= V
DDSPD
or V
SSSPD
, SDA in High-Z I
LO
±5 µA
Table 18: Temperature Sensor and EEPROM Serial Interface Timing
Parameter/Condition Symbol Min Max Units
Clock frequency
f
SCL 10 1000 kHz
Clock pulse width HIGH time
t
HIGH 260 ns
Clock pulse width LOW time
t
LOW 500 ns
Detect clock LOW timeout
t
TIMEOUT 25 35 ms
SDA rise time
t
R 120 ns
SDA fall time
t
F 120 ns
Data-in setup time
t
SU:DAT 50 ns
Data-in hold time
t
HD:DI 0 ns
Data out hold time
t
HD:DAT 0 350 ns
Start condition setup time
t
SU:STA 260 ns
Start condition hold time
t
HD:STA 260 ns
Stop condition setup time
t
SU:STO 260 ns
Time the bus must be free before a new transi-
tion can start
t
BUF 500 ns
Write time
t
W 5 ms
Warm power cycle time off
t
POFF 1 ms
Time from power-on to first command
t
INIT 10 ms
16GB (x72, ECC, SR) 288-Pin DDR4 RDIMM
Temperature Sensor with SPD EEPROM
09005aef8630c9f3
asf18c2gx72pz.pdf - Rev. D 8/16 EN
21
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.

MTA18ASF2G72PZ-2G9E1

Mfr. #:
Manufacturer:
Micron
Description:
Memory Modules DDR4 16GB RDIMM
Lifecycle:
New from this manufacturer.
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