IRF3808PbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 75 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.086 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– 5.9 7.0 mΩ V
GS
= 10V, I
D
= 82A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= 10V, I
D
= 250µA
g
fs
Forward Transconductance 100 ––– ––– S V
DS
= 25V, I
D
= 82A
––– ––– 20
µA
V
DS
= 75V, V
GS
= 0V
––– ––– 250 V
DS
= 60V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 200 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -200
nA
V
GS
= -20V
Q
g
Total Gate Charge ––– 150 220 I
D
= 82A
Q
gs
Gate-to-Source Charge ––– 31 47 nC V
DS
= 60V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 50 76 V
GS
= 10V
t
d(on)
Turn-On Delay Time ––– 16 ––– V
DD
= 38V
t
r
Rise Time ––– 140 ––– I
D
= 82A
t
d(off)
Turn-Off Delay Time ––– 68 ––– R
G
= 2.5Ω
t
f
Fall Time ––– 120 ––– V
GS
= 10V
Between lead,
––– –––
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 5310 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 890 ––– pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz, See Fig. 5
C
oss
Output Capacitance ––– 6010 ––– V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
C
oss
Output Capacitance ––– 570 ––– V
GS
= 0V, V
DS
= 60V, ƒ = 1.0MHz
C
oss
eff. Effective Output Capacitance ––– 1140 ––– V
GS
= 0V, V
DS
= 0V to 60V
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance ––– –––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25°C, L = 0.130mH
R
G
= 25Ω, I
AS
= 82A. (See Figure 12).
I
SD
≤ 82A, di/dt ≤ 310A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 82A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 93 140 ns T
J
= 25°C, I
F
= 82A
Q
rr
Reverse RecoveryCharge ––– 340 510 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
140
550
A
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
