IRF3808PBF

IRF3808PbF
www.irf.com 7
Fig 15. Typical Avalanche Current Vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 15, 16).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = DT/ Z
thJC
I
av
=
2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
1
10
100
1000
A
v
a
l
a
n
c
h
e
C
u
r
r
e
n
t
(
A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
Tj = 25°C due to
avalanche losses
0.01
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
100
200
300
400
500
E
A
R
,
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
TOP Single Pulse
BOTTOM 10% Duty Cycle
I
D
= 140A
IRF3808PbF
8 www.irf.com
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
+
-
+
+
+
-
-
-
R
G
V
DD
dv/dt controlled by R
G
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T*
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
V
GS
[ ]
[ ]
*** V
GS
= 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 17. For N-channel HEXFET
®
power MOSFETs
IRF3808PbF
www.irf.com 9
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2010
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-220AB package is not recommended for Surface Mount Application
TO-220AB Part Marking Information
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
INTERNATIONAL
PART NUMBER
RECT IF IE R
LOT CODE
AS S E MB L Y
LOGO
YEAR 0 = 2000
DAT E CODE
WEEK 19
LINE C
LOT CODE 1789
EXAMPLE : T HIS IS AN IRF 1010
Note: "P" in assembly line position
i ndi cates "L ead - F ree"
IN THE ASSEMBLY LINE "C"
AS S EMB L ED ON WW 19, 2000

IRF3808PBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 75V 140A 7mOhm 150nC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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