IRF3808PBF

Mfr. #:: IRF3808PBF
Manufacturer:: Infineon Technologies
Description:: MOSFET MOSFT 75V 140A 7mOhm 150nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRF3808PBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRF3808PBF Datasheet IRF3808PBF Datasheet (P4-P6)IRF3808PBF Datasheet (P7-P9)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 75 V

Id - Continuous Drain Current:: 140 A

Rds On - Drain-Source Resistance:: 7 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 150 nC

Pd - Power Dissipation:: 330 W

Configuration:: Single

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Transistor Type:: 1 N-Channel

Width:: 4.4 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Part # Aliases:: SP001563250

Unit Weight:: 0.211644 oz

Tags: IRF3808P, IRF3808, IRF38, IRF3, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF3808PBF Ratings and Reviews

I***v

Checked for 12 volts everything works fine can still order if there are no problems

2019-03-30

T***i

I'm very satisfied

2019-01-22

IRF3808PBF Description

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5.9Milliohms;ID 140A;TO-220AB;PD 330W;-55de

***ure Electronics: Single N-Channel 75 V 7 mOhm 220 nC HEXFET® Power Mosfet - TO-220-3

***klin Elektronik: INFINEON THT MOSFET NFET 75V 140A 7mΩ 150°C TO-220 IRF3808PBF

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 80V 140A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***el Electronic: Power Field-Effect Transistor, 140A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 75V, 140A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:140A; Junction to Case Thermal Resistance A:0.45°C/W; On State resistance @ Vgs = 10V:7ohm; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:550A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.6Milliohms;ID 169A;TO-220AB;PD 330W;-55de

***ure Electronics: Single N-Channel 55 V 5.3 mOhm 260 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

*** electronic: Transistor MOSFET N-Ch. 169A/55V TO220

***roFlash: Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 55V, 133A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:169A; Drain Source Voltage Vds:55V; On Resistance Rds(on):5.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:169A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.45°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:5.3mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:680A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 0.0078Ohm;ID 130A;TO-220AB;PD 330W;VGS +/-20

***ure Electronics: Single N-Channel 75 V 7.8 mOhm 160 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***eco: MOSFET, 75V, 130A, 7.8 MOHM, 160 NC QG, TO-220AB

***Yang: Trans MOSFET N-CH 80V 130A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***ment14 APAC: MOSFET, N, 75V, 130A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:130A; Junction to Case Thermal Resistance A:0.45°C/W; On State resistance @ Vgs = 10V:7.8ohm; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:520A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***(Formerly Allied Electronics): MOSFET, N Ch., 75V, 120A, 5.8 MOHM, 79 NC QG, TO-220AB, Pb-Free

***ure Electronics: Single N-Channel 75 V 5.8 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 230 W

***ineon: Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive

***ment14 APAC: MOSFET, N, 75V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3307; Current Id Max:120A; N-channel Gate Charge:79nC; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230mW; Pulse Current Idm:480A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

***ark: Mosfet Transistor, N Channel, 100 A, 80 V, 3.3 Mohm, 10 V, 3 V Rohs Compliant: Yes

***ment14 APAC: MOSFET, N CH, 80V, 100A, TO-220

***nell: MOSFET, N CH, 80V, 100A, TO-220; Transistor Polarity:N-Channel; Current Id Max:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:306W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (18-Jun-2010)

***ark: Mosfet Transistor, N Channel, 120 A, 80 V, 0.003 Ohm, 10 V, 3 V

***el Electronic: 120A, 80V, 0.0035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN

***ponent Stockers USA: 120 A 80 V 0.0035 ohm N-CHANNEL Si POWER MOSFET TO-220AB

Market price

Part #	Mfg.	Description	Stock	Price
IRF3808PBF DISTI # V99:2348_13890381	Infineon Technologies AG	Trans MOSFET N-CH Si 80V 140A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1000	1000:$1.0315 500:$1.2377 100:$1.3587 10:$1.6364 1:$1.8508
IRF3808PBF DISTI # IRF3808PBF-ND	Infineon Technologies AG	MOSFET N-CH 75V 140A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	1409In Stock	1000:$1.2561 500:$1.5159 100:$1.9491 10:$2.4260 1:$2.6900
IRF3808PBF DISTI # 30155533	Infineon Technologies AG	Trans MOSFET N-CH Si 80V 140A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	5980	5000:$0.8979 2500:$0.9236 1000:$0.9507 500:$0.9795 250:$1.0102 100:$1.0427 12:$1.0775
IRF3808PBF DISTI # 30151302	Infineon Technologies AG	Trans MOSFET N-CH Si 80V 140A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1000	1000:$1.0315 500:$1.2377 100:$1.3587 10:$1.6364 8:$1.8508
IRF3808PBF DISTI # SP001563250	Infineon Technologies AG	Trans MOSFET N-CH 80V 140A 3-Pin(3+Tab) TO-220AB (Alt: SP001563250) RoHS: Compliant Min Qty: 1	Europe - 3000	1:€1.1559 10:€1.0499 25:€0.9629 50:€0.9239 100:€0.8889 500:€0.8559 1000:€0.8249
IRF3808PBF DISTI # IRF3808PBF	Infineon Technologies AG	Trans MOSFET N-CH 80V 140A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF3808PBF) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$0.9069 2000:$0.8749 4000:$0.8429 6000:$0.8149 10000:$0.7999
IRF3808PBF DISTI # 38K2794	Infineon Technologies AG	MOSFET Transistor, N Channel, 140 A, 75 V, 7 mohm, 10 V, 4 V , RoHS Compliant: Yes	0
IRF3808PBF DISTI # 70017476	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 75V,RDS(ON) 5.9 Milliohms,ID 140A,TO-220AB,PD 330W,-55de RoHS: Compliant	0	1:$4.4200 10:$3.9000 100:$3.4000 500:$2.9500 1000:$2.6000
IRF3808PBF	International Rectifier	RoHS: Not Compliant	147	1000:$1.1600 500:$1.2200 100:$1.2700 25:$1.3300 1:$1.4300
IRF3808PBF DISTI # 942-IRF3808PBF	Infineon Technologies AG	MOSFET MOSFT 75V 140A 7mOhm 150nC RoHS: Compliant	1320	1:$2.3200 10:$1.9700 100:$1.5800 500:$1.3800 1000:$1.1500
IRF3808PBF	International Rectifier		50	3:$1.9500 12:$1.4625 36:$1.2188
IRF3808PBF	International Rectifier	MOSFET Transistor, N-Channel, TO-220AB	40	14:$1.6250 3:$1.9500 1:$2.6000
IRF3808PBF DISTI # 8655768	Infineon Technologies AG	MOSFET N-CH 80V 140A HEXFET TO-220AB, TU	60	5:£1.7960 100:£1.5800 250:£1.3820 500:£1.2920 1000:£1.2200
IRF3808PBF DISTI # 8655768P	Infineon Technologies AG	MOSFET N-CH 80V 140A HEXFET TO-220AB, TU	400	100:£1.5800 250:£1.3820 500:£1.2920 1000:£1.2200
IRF3808PBF DISTI # 8312815	Infineon Technologies AG	MOSFET N-CH 80V 140A HEXFET TO-220AB, PK	65	5:£1.7960 35:£1.5800 70:£1.3820 125:£1.2920 250:£1.2200
IRF3808PBF DISTI # IRF3808PBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,75V,140A,330W,TO220AB	240	1:$1.8900 3:$1.7000 10:$1.4300 100:$1.2400
IRF3808PBF DISTI # IRF3808PBF	Infineon Technologies AG	N-Ch 75V 140A 330W 0,007R TO220AB RoHS: Compliant	1330	10:€1.2400 50:€0.9380 200:€0.8380 500:€0.8070
IRF3808PBF DISTI # XSLY00000000745	INFINEON/IR	TO-220AB RoHS: Compliant	3600	600:$1.2300 3600:$1.1500
IRF3808PBF DISTI # C1S322000480454	Infineon Technologies AG	Trans MOSFET N-CH Si 80V 140A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1000	1000:$1.0315 500:$1.2377 100:$1.3587 10:$1.6364
IRF3808PBF DISTI # 8657661	Infineon Technologies AG	MOSFET, N, 75V, 140A, TO-220 RoHS: Compliant	0	1:$3.6800 10:$3.1200 100:$2.5000 500:$2.1900 1000:$1.8200

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IRF3808PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

I***v

T***i

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes