AUIRL7766M2TR
Base Part Number Package Type
Standard Pack
Form Quantity
AUIRL7766M2
DirectFET Medium Can
Tape and Reel 4800
AUIRL7766M2TR
Orderable Part Number
AUTOMOTIVE GRADE
V
(BR)DSS
100V
R
DS(on)
typ.
8.0m
I
D (Silicon Limited)
51A
max.
10m
Q
g (typical)
44nC
DirectFET
®
ISOMETRIC
M4
Automotive DirectFET
®
Power MOSFET
Applicable DirectFET
®
Outline and Substrate Outline
SB SC M2 M4 L4 L6 L8
Description
The AUIRL7766M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRL7766M2 to offer substantial system level savings and performance improvement
specifically in high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing
techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature
and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current
automotive applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Max. Units
V
DS
Drain-to-Source Voltage 100
V
V
GS
Gate-to-Source Voltage ±16
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 51
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 36
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 10
I
DM
Pulsed Drain Current 204
P
D
@T
C
= 25°C Power Dissipation 62.5
W
P
D
@T
A
= 25°C Power Dissipation 2.5
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 61
mJ
E
AS
(Tested)
Single Pulse Avalanche Energy 237
I
AR
Avalanche Current
See Fig. 16, 17, 18a, 18b
A
E
AR
Repetitive Avalanche Energy
mJ
T
P
Peak Soldering Temperature 270
°C
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
1 2015-12-11
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
Advanced Process Technology
Optimized for Automotive DC-DC and
other Heavy Load Applications
Logic Level Gate Drive
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
Automotive Qualified *
DD
G
S
S
S
S
