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AUIRL7766M2TR

P1-P3P4-P6P7-P9P10-P11
AUIRL7766M2TR
4 2015-12-11
Fig. 3 Typical On-Resistance vs. Gate Voltage
Fig. 1 Typical Output Characteristics
Fig 5. Transfer Characteristics
Fig 6. Normalized On-Resistance vs. Temperature
Fig. 2 Typical Output Characteristics
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
10V
7.0V
4.5V
3.5V
3.0V
2.8V
BOTTOM 2.5V
60µs PULSE WIDTH
Tj = 25°C
2.5V
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.5V
60µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
7.0V
4.5V
3.5V
3.0V
2.8V
BOTTOM 2.5V
2 4 6 8 10 12 14 16
V
GS,
Gate -to -Source Voltage (V)
0
5
10
15
20
25
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
)
I
D
= 31A
T
J
= 125°C
T
J
= 25°C
0 25 50 75 100 125 150 175 200
I
D
, Drain Current (A)
0
10
20
30
40
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
)
T
J
= 25°C
T
J
= 125°C
Vgs = 10V
1 2 3 4 5
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= -40°C
T
J
= 25°C
T
J
= 175°C
V
DS
= 50V
60µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120140 160 180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 31A
V
GS
= 10V
Fig. 4 Typical On-Resistance vs. Drain Current
AUIRL7766M2TR
5 2015-12-11
Fig 8. Typical Source-Drain Diode Forward Voltage
Fig 9. Typical Forward Trans conductance vs. Drain Current
Fig 10. Typical Capacitance vs. Drain-to-Source Voltage
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
3.0
V
G
S
(
t
h
)
,
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 150µA
I
D
= 250µA
I
D
= 1.0mA
I
D
= 1.0A
0.00.20.40.60.81.01.2
V
SD
, Source-to-Drain Voltage (V)
1.0
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= -40°C
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
0 20 40 60 80 100 120
I
D
,Drain-to-Source Current (A)
0
50
100
150
200
250
G
f
s
,
F
o
r
w
a
r
d
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 5.0V
380µs PULSE WIDTH
Fig. 7 Typical Threshold Voltage vs.
Junction Temperature
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 20 40 60 80 100 120
Q
G
,
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
I
D
= 31A
Fig 11. Typical Gate Charge vs.
Gate-to-Source Voltage
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
10
20
30
40
50
60
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Fig 12. Maximum Drain Current vs. Case Temperature
AUIRL7766M2TR
6 2015-12-11
Fig 16. Typical Avalanche Current vs. Pulse Width
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
DC
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
50
100
150
200
250
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP 6.7A
17A
BOTTOM 31A
Fig 14. Maximum Avalanche Energy vs. Temperature
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
°
C
/
W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
C
C
4
4
R
4
R
4
0.07641 0.000021
0.36635 0.000737
0.94890 0.0391496
1.00767 0.0073206
Ri (°C/W) i (sec)
Fig 13. Maximum Safe Operating Area
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.01
0.1
1
10
100
1000
A
v
a
l
a
n
c
h
e
C
u
r
r
e
n
t
(
A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming

j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C and
Tstart =25°C (Single Pulse)
P1-P3P4-P6P7-P9P10-P11

AUIRL7766M2TR

Mfr. #:
Buy AUIRL7766M2TR
Manufacturer:
Infineon / IR
Description:
MOSFET 100V AUTO GRADE 1 N-CH HEXFET
Lifecycle:
New from this manufacturer.
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