AUIRL7766M2TR

AUIRL7766M2TR
7 2015-12-11
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as T
jmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. P
D (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av = Allowable avalanche current.
7. T
= Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 16, 17).
t
av = Average time in avalanche.
D = Duty cycle in avalanche = t
av ·f
Z
thJC(D, tav) = Transient thermal resistance, see Figures 15)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = T/ Z
thJC
I
av
= 2T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 17. Maximum Avalanche Energy vs. Temperature
Fig 18a. Unclamped Inductive Test Circuit
Fig 18b. Unclamped Inductive Waveforms
Fig 19a. Gate Charge Test Circuit
Fig 19b. Gate Charge Waveform
VDD
Fig 20a. Switching Time Test Circuit
Fig 20b. Switching Time Waveforms
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
10
20
30
40
50
60
70
E
A
R
,
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
I
D
= 31A
AUIRL7766M2TR
8 2015-12-11
DirectFET
®
Board Footprint, M4 (Medium Size Can).
Please see DirectFET
®
application note AN-1035 for all details regarding the assembly of DirectFET
®
.
This includes all recommendations for stencil and substrate designs.
G
D
S
DD
D
SS
S
G = GATE
D = DRAIN
S = SOURCE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRL7766M2TR
9 2015-12-11
DirectFET
®
Outline Dimension, M4 Outline (Medium Size Can).
Please see DirectFET
®
application note AN-1035 for all details regarding the assembly of DirectFET
®
. This includes
all recommendations for stencil and substrate designs.
DirectFET
®
Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
0.0320.78 0.82 0.031
0.015 0.0170.38 0.42
R0.0030.02 0.08 0.001
M
P
0.029
0.007
0.68
0.09
0.74
0.17
0.027
0.003
L1
0.1423.50 3.60 0.138
CODE
A
B
C
D
E
F
G
H
J
K
L
0.047
0.094
0.156
0.032
0.018
0.024
MAX
0.250
0.201
1.10
2.30
3.85
0.78
0.35
0.58
MIN
6.25
4.80
1.20
2.40
3.95
0.82
0.45
0.62
MAX
6.35
5.05
0.090
0.043
0.152
0.031
0.023
0.014
MIN
0.189
0.246
METRIC IMPERIAL
DIMENSIONS
0.78 0.82
0.0320.031
PART NUMBER
LOGO
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
"AU" = GATE AND
AUTOMOTIVE MARKING

AUIRL7766M2TR

Mfr. #:
Manufacturer:
Infineon / IR
Description:
MOSFET 100V AUTO GRADE 1 N-CH HEXFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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