10
DS8207L/M-08 September 2016www.richtek.com
RT8207L/M
©
Copyright 2016 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.
Parameter Symbol Test Conditions Min Typ Max Unit
Driver On-Resistance
UGATE Driver Source R
UGATEsr
BOOT PHASE Forced to 5V -- 2.5 5
UGATE Driver Sink R
UGATEsk
BOOT PHASE Forced to 5V -- 1.5 3
LGATE Driver Source R
LGATEsr
DL, High State -- 2.5 5
LGATE Driver Sink R
LGATEsk
DL, Low State -- 0.8 1.6
LGATE Rising (PHASE = 1.5V) -- 40 --
Dead Time
UGATE Rising -- 40 --
ns
Internal Boost Charging
Switch On Resistance
VDDP to BOOT, 10mA -- -- 80
Logic I/O
Logic Input Low Voltage S3, S5 Low -- -- 0.8 V
Logic Input High Voltage S3, S5 High 2 -- -- V
Logic Input Current S3, S5 = VDD/GND 1 0 1 A
PGOOD (upper side threshold decide by Over Voltage threshold)
Trip Threshold (Falling)
Measured at FB, with respect to
reference, no load
13 10 7 %
Trip Threshold (Hysteresis) -- 3 -- %
Fault Propagation Delay
Falling edge, FB forced below
PGOOD trip threshold
-- 2.5 -- s
Output Low Voltage I
SINK
= 1mA -- -- 0.4 V
Leakage Current I
LEAK
High state, forced to 5V -- -- 1 A
VTT LDO
V
VDD Q
= V
LDOIN
= 1.2V/1.35/1.5V/1.8V,
I
VTT
= 0A
20 -- 20
V
VDD Q
= V
LDOIN
= 1.2V/1.35/1.5V/1.8V,
I
VTT
< 1A
30 -- 30
V
VDD Q
= V
LDOIN
= 1.2V/1.35,
I
VTT
< 1.2A
40 -- 40
VTT Output Tolerance V
VTTTOL
V
VDD Q
= V
LDOIN
= 1.5V/1.8V,
I
VTT
< 1.5A
40 -- 40
mV
VDDQ
TT
V
V0.95
2




PGOOD = High
1.6 2.6 3.6
VTT Source Current Limit I
VTTOCLSRC
V
TT
= 0V -- 1.3 --
A
VDDQ
TT
V
V1.05
2




,
PGOOD = High
1.6 2.6 3.6
VTT Sink Current Limit I
VTTOCLSNK
V
TT
= V
VDD Q
-- 1.3 --
A
VTT Leakage Current I
VTTLK
S5 = 5V, S3 = 0V,
VDDQ
TT
V
V
2



10 -- 10 A
VTTSNS Leakage Current I
VTTSNSLK
I
SINK
= 1mA 1 -- 1 A
VTT Discharge Current I
DSCHRG
V
VDD Q
= 0V, V
TT
= 0.5V, S5 = S3 =0V 10 30 -- mA
11
DS8207L/M-08 September 2016 www.richtek.com
RT8207L/M
©
Copyright 2016 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.
Parameter Symbol Test Conditions Min Typ Max Unit
VTTREF Output Voltage V
VTTREF
VDDQ
VTTREF
V
V
2



-- 0.9/0.75 -- V
V
LDOIN
= V
VDD Q
= 1.5V,
I
VTTREF
<10mA
15 -- 15
VDDQSNS/2, VTTREF
Output Voltage Tolerance
V
VTTREFTOL
V
LDOIN
= V
VDD Q
= 1.8V,
I
VTTREF
<10mA
18 -- 18
mV
VTTREF Source Current
Limit
I
VTTREFOCL
V
VTTREF
= 0V 10 40 80 mA
Note 1. Stresses beyond those listed Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2. θ
JA
is measured under natural convection (still air) at T
A
= 25°C with the component mounted on a high effective-
thermal-conductivity four-layer test board on a JEDEC 51-7 thermal measurement standard. θ
JC
is measured at the
exposed pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
12
DS8207L/M-08 September 2016www.richtek.com
RT8207L/M
©
Copyright 2016 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.
Typical Operating Characteristics
VDDQ Efficiency vs. Output Current
0
10
20
30
40
50
60
70
80
90
100
0.001 0.01 0.1 1 10
Output Current (A)
Efficiency (%) 1
V
IN
= 8V, V
DDQ
= 1.8V, S3 = GND, S5 = 5V
DDRII
VDDQ Efficiency vs. Output Current
0
10
20
30
40
50
60
70
80
90
100
0.001 0.01 0.1 1 10
Output Current (A)
Efficiency (%) 1
V
IN
= 12V, V
DDQ
= 1.5V, S3 = GND, S5 = 5V
DDRIII
VDDQ Efficiency vs. Output Current
0
10
20
30
40
50
60
70
80
90
100
0.001 0.01 0.1 1 10
Output Current (A)
Efficiency (%) 1
V
IN
= 20V, V
DDQ
= 1.5V, S3 = GND, S5 = 5V
DDRIII
VDDQ Efficiency vs. Output Current
0
10
20
30
40
50
60
70
80
90
100
0.001 0.01 0.1 1 10
Output Current (A)
Efficiency (%) 1
V
IN
= 20V, V
DDQ
= 1.8V, S3 = GND, S5 = 5V
DDRII
VDDQ Efficiency vs. Output Current
0
10
20
30
40
50
60
70
80
90
100
0.001 0.01 0.1 1 10
Output Current (A)
Efficiency (%) 1
V
IN
= 8V, V
DDQ
= 1.5V, S3 = GND, S5 = 5V
DDRIII
VDDQ Efficiency vs. Output Current
0
10
20
30
40
50
60
70
80
90
100
0.001 0.01 0.1 1 10
Output Current (A)
Efficiency (%) 1
V
IN
= 12V, V
DDQ
= 1.8V, S3 = GND, S5 = 5V
DDRII

RT8207LGQW

Mfr. #:
Manufacturer:
Description:
IC REG CTRLR DDR 1OUT 24WQFN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet