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IS61LV256AL-10TLI

P1-P3P4-P6P7-P9P10-P12
Integrated Silicon Solution, Inc. — 1-800-379-4774 1
Rev. C
07/29/09
IS61LV256AL
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
FEATURES
• High-speedaccesstimes:
— 10 ns
• Automaticpower-downwhenchipisdeselected
• CMOSlowpoweroperation
— 60 µW(typical)CMOSstandby
— 65 mW (typical) operating
• TTLcompatibleinterfacelevels
• Single3.3Vpowersupply
• Fullystaticoperation:noclockorrefresh
required
• Three-stateoutputs
• Lead-freeavailable
DESCRIPTION
TheISSIIS61LV256ALisaveryhigh-speed,lowpower,
32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSI's
high-performanceCMOStechnology.Thishighlyreliable
process coupled with innovative circuit design techniques,
yieldsaccesstimesasfastas8nsmaximum.
When CEisHIGH(deselected),thedeviceassumesa
standby mode at which the power dissipation is reduced to
150µW(typical)withCMOSinputlevels.
Easymemoryexpansionisprovidedbyusinganactive
LOWChipEnable(CE).TheactiveLOWWriteEnable(WE)
controls both writing and reading of the memory.
The IS61LV256AL is available in the JEDEC standard
28-pin,300-milSOJandthe450-milTSOP(TypeI)pack-
ages.
32K x 8 LOW VOLTAGE
CMOS STATIC RAM
FUNCTIONAL BLOCK DIAGRAM
A0-A14
CE
OE
WE
32KX8
MEMORYARRAY
DECODER
COLUMNI/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
AUGUST 2009
IS61LV256AL
2 Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
07/29/09
PIN CONFIGURATION
28-Pin SOJ
22
23
24
25
26
27
28
1
2
3
4
5
6
7
21
20
19
18
17
16
15
14
13
12
11
10
9
8
OE
A11
A9
A8
A13
WE
VDD
A14
A12
A7
A6
A5
A4
A3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VDD
WE
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PIN CONFIGURATION
28-Pin TSOP (Type I)
PIN DESCRIPTIONS
A0-A14 AddressInputs
CE Chip Enable Input
OE OutputEnableInput
WE Write Enable Input
I/O0-I/O7Input/Output
Vd d Power
GND Ground
TRUTH TABLE
Mode WE CE OE I/O Operation VD D Current
NotSelected X H X High-Z Is b 1, Is b 2
(Power-down)
OutputDisabled H L H High-Z Ic c
Read H L L do u t Ic c
Write L L X dI n Ic c
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
Vd d PowerSupplyVoltageRelativetoGND –0.5to+4.6 V
Vt e r m TerminalVoltagewithRespecttoGND –0.5to+4.6 V
ts t g StorageTemperature –65to+150 °C
Pd PowerDissipation 1 W
Io u t DCOutputCurrent ±20 mA
Notes:
1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdam-
agetothedevice.Thisisastressratingonlyandfunctionaloperationofthedeviceattheseoranyother
conditionsabovethoseindicatedintheoperationalsectionsofthisspecicationisnotimplied.Exposure
toabsolutemaximumratingconditionsforextendedperiodsmayaffectreliability.
Integrated Silicon Solution, Inc. — 1-800-379-47743
Rev. C
07/29/09
IS61LV256AL
DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)
Symbol Parameter Test Conditions Min. Max. Unit
Vo h OutputHIGHVoltage Vd d = Min.,Io h = –2.0mA 2.4 — V
Vo l OutputLOWVoltage Vd d = Min.,Io l = 4.0mA — 0.4 V
VI h InputHIGHVoltage 2.2 Vd d + 0.3 V
VI l InputLOWVoltage
(1)
–0.3 0.8 V
Il I InputLeakage GND≤ VI n ≤ Vd d
Com. –1 1 µA
Ind. –2 2
Il o OutputLeakage
GND≤ Vo u t ≤ Vd d , OutputsDisabled Com. –1 1 µA
Ind. –2 2
Notes:
1. V
I l (min.) = –0.3V(DC);VI l (min.)=–2.0V(pulsewidth≤ 2.0 ns).
V
I h (max.) = Vd d + 0.5V(DC);VIh (max.)=Vd d +2.0V(pulsewidth≤ 2.0 ns).
2. Notmorethanoneoutputshouldbeshortedatonetime.Durationoftheshortcircuitshouldnotexceed30seconds.
OPERATING RANGE
Range Ambient Temperature Speed (ns) VD D
(1)
Commercial 0°Cto+70°C 10 3.3V,+10%,–5%
Industrial –40°Cto+85°C 10 3.3V+10%,–5%
Note: 1.Ifoperatedat12ns,Vd d rangeis3.3V+10%.
P1-P3P4-P6P7-P9P10-P12

IS61LV256AL-10TLI

Mfr. #:
Buy IS61LV256AL-10TLI
Manufacturer:
ISSI
Description:
SRAM 256K 32Kx8 10ns Async SRAM 3.3v
Lifecycle:
New from this manufacturer.
Delivery:
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