IS61LV256AL
4 Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
07/29/09
CAPACITANCE
(1,2)
Symbol Parameter Conditions Max. Unit
cI n Input Capacitance VI n = 0V 6 pF
co u t OutputCapacitance Vo u t = 0V 5 pF
Notes:
1.Testedinitiallyandafteranydesignorprocesschangesthatmayaffecttheseparameters.
2. Testconditions:T
a = 25°c, f=1MHz,Vd d =3.3V.
POWER SUPPLY CHARACTERISTICS
(1)
(OverOperatingRange)
-10 ns
Sym. Parameter Test Conditions Min. Max. Unit
Ic c 1 Vd d Operating Vd d = Max.,CE = VI l Com. — 20 mA
Supply Current Io u t = 0 mA,f=1MHz Ind. — 25
Ic c 2 Vd d DynamicOperating Vd d = Max.,CE = VI l Com. — 30 mA
Supply Current Io u t = 0 mA, f = fm a x Ind. — 35
typ.
(2)
20
Is b 1 TTLStandbyCurrent Vd d = Max., Com. — 1 mA
(TTLInputs) VI n = VIh or VIl Ind. — 1
CE ≥ VI h, f = 0
Is b 2 CMOSStandby Vd d = Max., Com. — 40 µA
Current(CMOSInputs) CE ≥ Vd d – 0.2V, Ind. — 50
VI n ≥ Vd d – 0.2V, or typ.
(2)
2
VI n ≤ 0.2V, f = 0
Notes:
1. At f = f
m a x ,addressanddatainputsarecyclingatthemaximumfrequency,f=0meansnoinputlineschange.
2.TypicalvaluesaremeasuredatV
d d =3.3V,Ta = 25
o
Candnot100%tested.