IS61LV256AL-10TLI

IS61LV256AL
4 Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
07/29/09
CAPACITANCE
(1,2)
Symbol Parameter Conditions Max. Unit
cI n Input Capacitance VI n = 0V 6 pF
co u t OutputCapacitance Vo u t = 0V 5 pF
Notes:
1.Testedinitiallyandafteranydesignorprocesschangesthatmayaffecttheseparameters.
2. Testconditions:T
a = 25°c, f=1MHz,Vd d =3.3V.
POWER SUPPLY CHARACTERISTICS
(1)
(OverOperatingRange)
-10 ns
Sym. Parameter Test Conditions Min. Max. Unit
Ic c 1 Vd d Operating Vd d = Max.,CE = VI l Com. 20 mA
Supply Current Io u t = 0 mA,f=1MHz Ind. 25
Ic c 2 Vd d DynamicOperating Vd d = Max.,CE = VI l Com. — 30 mA
Supply Current Io u t = 0 mA, f = fm a x Ind. 35
typ.
(2)
20
Is b 1 TTLStandbyCurrent Vd d = Max., Com. 1 mA
(TTLInputs) VI n = VIh or VIl Ind. 1
CE VI h, f = 0
Is b 2 CMOSStandby Vd d = Max., Com. 40 µA
Current(CMOSInputs) CE Vd d – 0.2V, Ind. 50
VI n Vd d – 0.2V, or typ.
(2)
2
VI n 0.2V, f = 0
Notes:
1. At f = f
m a x ,addressanddatainputsarecyclingatthemaximumfrequency,f=0meansnoinputlineschange.
2.TypicalvaluesaremeasuredatV
d d =3.3V,Ta = 25
o
Candnot100%tested.
Integrated Silicon Solution, Inc. — 1-800-379-4774 5
Rev. C
07/29/09
IS61LV256AL
AC TEST LOADS
Figure 1. Figure 2.
AC TEST CONDITIONS
Parameter Unit
InputPulseLevel 0Vto3.0V
InputRiseandFallTimes 3ns
InputandOutputTiming 1.5V
andReferenceLevels
OutputLoad SeeFigures1and2
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(OverOperatingRange)
-10 ns -12 ns
Symbol Parameter Min. Max. Min. Max. Unit
tr c ReadCycleTime 10 — 12 — ns
ta a AddressAccessTime — 10 — 12 ns
to h a OutputHoldTime 2 — 2 — ns
ta c e CEAccessTime — 10 — 12 ns
td o e OEAccessTime — 5 — 5 ns
tl z o e
(2)
OEtoLow-ZOutput 0 — 0 — ns
th z o e
(2)
OEtoHigh-ZOutput — 5 — 5 ns
tl z c e
(2)
CEtoLow-ZOutput 3 — 3 — ns
th z c e
(2)
CEtoHigh-ZOutput — 5 — 6 ns
tP u
(3)
CEtoPower-Up 0 — 0 — ns
tP d
(3)
CEtoPower-Down — 10 — 12 ns
Notes:
1. Testconditionsassumesignaltransitiontimesof3nsorless,timingreferencelevelsof1.5V,inputpulselevelsof0to3.0Vand
outputloadingspeciedinFigure1.
2. TestedwiththeloadinFigure2.Transitionismeasured±200mVfromsteady-statevoltage.Not100%tested.
3. Not100%tested.
319
30 pF
Including
jig and
scope
353
OUTPUT
3.3V
319
5 pF
Including
jig and
scope
353
OUTPUT
3.3V
IS61LV256AL
6 Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
07/29/09
DATAVALID
READ1.eps
PREVIOUSDATAVALID
t
AA
t
OHA
t
OHA
t
RC
DOUT
ADDRESS
READ CYCLE NO. 2
(1,3)
Notes:
1. WEisHIGHforaReadCycle.
2. Thedeviceiscontinuouslyselected.OE, CE = V
I l .
3. AddressisvalidpriortoorcoincidentwithCELOWtransitions.
AC WAVEFORMS
READ CYCLE NO. 1
(1,2)

IS61LV256AL-10TLI

Mfr. #:
Manufacturer:
ISSI
Description:
SRAM 256K 32Kx8 10ns Async SRAM 3.3v
Lifecycle:
New from this manufacturer.
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