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PBSS4130PAN,115
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
NXP Semiconductors
PBSS4130P
AN
30 V
, 1 A NPN/NPN low VCEsat (BISS) transistor
PBSS4130PAN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
11 January 2013
9 / 17
006aad171
10
-5
10
10
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
10
2
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
4-layer PCB 70 µm, mounting pad for collector 1 cm
2
Fig. 9.
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
10.
Characteristics
T
able 7.
Characteristics
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
Per transistor
V
CB
= 24 V; I
E
= 0 A; T
amb
= 25 °C
-
-
100
nA
I
CBO
collector-base cut-off
current
V
CB
= 24 V; I
E
= 0 A; T
j
= 150 °C
-
-
50
µA
I
EBO
emitter-base cut-off
current
V
EB
= 5 V; I
C
= 0 A; T
amb
= 25 °C
-
-
100
nA
V
CE
= 2 V; I
C
= 100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
240
370
-
V
CE
= 2 V; I
C
= 500 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
210
320
-
h
FE
DC current gain
V
CE
= 2 V; I
C
= 1 A; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
180
270
-
I
C
= 500 mA; I
B
= 50 mA; T
amb
= 25 °C
-
75
100
mV
I
C
= 1 A; I
B
= 50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
155
200
mV
V
CEsat
collector-emitter
saturation voltage
I
C
= 1 A; I
B
= 100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
150
190
mV
R
CEsat
collector-emitter
saturation resistance
I
C
= 1 A; I
B
= 0.1 A; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
-
-
190
mΩ
NXP Semiconductors
PBSS4130P
AN
30 V
, 1 A NPN/NPN low VCEsat (BISS) transistor
PBSS4130PAN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
11 January 2013
10 / 17
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
I
C
= 500 mA; I
B
= 50 mA; T
amb
= 25 °C
-
-
1
V
I
C
= 1 A; I
B
= 50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-
1.1
V
V
BEsat
base-emitter saturation
voltage
I
C
= 1 A; I
B
= 100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-
1.1
V
V
BEon
base-emitter turn-on
voltage
V
CE
= 2 V; I
C
= 0.5 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-
0.9
V
t
d
delay time
-
15
-
ns
t
r
rise time
-
30
-
ns
t
on
turn-on time
-
45
-
ns
t
s
storage time
-
310
-
ns
t
f
fall time
-
55
-
ns
t
off
turn-off time
V
CC
= 10 V; I
C
= 500 mA; I
Bon
= 25 mA;
I
Boff
= -25 mA; T
amb
= 25 °C
-
365
-
ns
f
T
transition frequency
V
CE
= 10 V; I
C
= 50 mA; f = 100 MHz;
T
amb
= 25 °C
90
165
-
MHz
C
c
collector capacitance
V
CB
= 10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
-
7.5
10
pF
006aad172
200
400
600
h
FE
0
I
C
(mA)
10
-1
10
4
10
3
1
10
2
10
(1)
(2)
(3)
V
CE
= 2 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 10.
DC current gain as a function of collector
current; typical values
V
CE
(V)
0
5
4
2
3
1
006aad173
0.8
1.2
0.4
1.6
2.0
I
C
(A)
0
I
B
= 10 mA
9
8
7
6
5
4
3
2
1
T
amb
= 25 °C
Fig. 1
1.
Collector current as a function of collector-
emitter voltage; typical values
NXP Semiconductors
PBSS4130P
AN
30 V
, 1 A NPN/NPN low VCEsat (BISS) transistor
PBSS4130PAN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
11 January 2013
11 / 17
006aad174
0.4
0.8
1.2
V
BE
(V)
0
I
C
(mA)
10
-1
10
4
10
3
1
10
2
10
(1)
(2)
(3)
V
CE
= 2 V
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 12.
Base-emitter voltage as a function of collector
current; typical values
006aad175
0.6
0.8
0.4
1.0
1.2
V
BEsat
(V)
0.2
I
C
(mA)
10
-1
10
4
10
3
1
10
2
10
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 13.
Base-emitter saturation voltage as a function of
collector current; typical values
006aad176
10
-1
10
-2
1
V
CEsat
(V)
10
-3
I
C
(mA)
10
-1
10
4
10
3
1
10
2
10
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 14.
Collector-emitter saturation voltage as a
function of collector current; typical values
006aad177
10
-1
10
-2
1
V
CEsat
(V)
10
-3
I
C
(mA)
10
-1
10
4
10
3
1
10
2
10
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig. 15.
Collector-emitter saturation voltage as a
function of collector current; typical values
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
PBSS4130PAN,115
Mfr. #:
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Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 30V 1A NPN/NPN lo VCEsat transistor
Lifecycle:
New from this manufacturer.
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