NXP Semiconductors
PBSS4130PAN
30 V, 1 A NPN/NPN low VCEsat (BISS) transistor
PBSS4130PAN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 11 January 2013 3 / 17
Symbol Parameter Conditions Min Max Unit
I
BM
peak base current single pulse; t
p
≤ 1 ms - 1 A
[1] - 370 mW
[2] - 570 mW
[3] - 530 mW
[4] - 700 mW
[5] - 450 mW
[6] - 760 mW
[7] - 700 mW
P
tot
total power dissipation T
amb
≤ 25 °C
[8] - 1450 mW
Per device
[1] - 510 mW
[2] - 780 mW
[3] - 730 mW
[4] - 960 mW
[5] - 620 mW
[6] - 1040 mW
[7] - 960 mW
P
tot
total power dissipation T
amb
≤ 25 °C
[8] - 2000 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated, mounting pad for
collector 1 cm
2
.
[3] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated and standard footprint.
[4]
Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm
2
.
[5] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated and standard footprint.
[6] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated, mounting pad for
collector 1 cm
2
.
[7] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated and standard footprint.
[8]
Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm
2
.
