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PBSS4130PAN,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
NXP Semiconductors
PBSS4130PAN
30 V, 1 A NPN/NPN low VCEsat (BISS) transistor
PBSS4130PAN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 11 January 2013 6 / 17
006aad167
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB 35 µm, mounting pad for collector 1 cm
2
Fig. 3. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aad168
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
4-layer PCB 35 µm, standard footprint
Fig. 4. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
NXP Semiconductors
PBSS4130PAN
30 V, 1 A NPN/NPN low VCEsat (BISS) transistor
PBSS4130PAN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 11 January 2013 7 / 17
006aad169
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
4-layer PCB 35 µm, mounting pad for collector 1 cm
2
Fig. 5. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aac610
10
- 5
1010
- 2
10
- 4
10
2
10
- 1
t
p
(s)
10
- 3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
FR4 PCB 70 µm, standard footprint
Fig. 6. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
NXP Semiconductors
PBSS4130PAN
30 V, 1 A NPN/NPN low VCEsat (BISS) transistor
PBSS4130PAN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 11 January 2013 8 / 17
006aac611
10
- 5
1010
- 2
10
- 4
10
2
10
- 1
t
p
(s)
10
- 3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
FR4 PCB 70 µm, mounting pad for collector 1 cm
2
Fig. 7. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aad170
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
4-layer PCB 70 µm, standard footprint
Fig. 8. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

PBSS4130PAN,115

Mfr. #:
Buy PBSS4130PAN,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 30V 1A NPN/NPN lo VCEsat transistor
Lifecycle:
New from this manufacturer.
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