IXYN82N120C3 Datasheet IXYN82N120C3 | P1-P3

IXYN82N120C3

V

CES

= 1200V

I

C110

= 66A

V

CE(sat)

≤ ≤

≤

3.2V

t

fi(typ)

= 93ns

DS100389A(12/12)

High-Speed IGBT

for 20-50 kHz Switching

Features

z

Optimized for Low Switching Losses

z

Square RBSOA

z

2500V~ Isolation Voltage

z

Positive Thermal Coefficient of

Vce(sat)

z

Avalanche Rated

z

High Current Handling Capability

z

International Standard Package

Advantages

z

High Power Density

z

Low Gate Drive Requirement

Applications

z

High Frequency Power Inverters

z

UPS

z

Motor Drives

z

SMPS

z

PFC Circuits

z

Battery Chargers

z

Welding Machines

z

Lamp Ballasts

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250μA, V

GE

= 0V 1200 V

V

GE(th)

I

C

= 250μA, V

CE

= V

GE

2.5 4.5 V

I

CES

V

CE

= V

CES

,

V

GE

= 0V 25 μA

T

J

= 150°C 500 μA

I

GES

V

CE

= 0V, V

GE

= ±20V ±100 nA

V

CE(sat)

I

C

= 82A, V

GE

= 15V, Note 1 2.75 3.20 V

T

J

= 150°C 3.76 V

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 175°C 1200 V

V

CGR

T

J

= 25°C to 175°C, R

GE

= 1MΩ 1200 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C 120 A

I

C110

T

C

= 110°C 66 A

I

CM

T

C

= 25°C, 1ms 380 A

I

A

T

C

= 25°C 41 A

E

AS

T

C

= 25°C 800 mJ

SSOA V

GE

= 15V, T

VJ

= 150°C, R

G

= 2Ω I

CM

= 164 A

(RBSOA) Clamped Inductive Load @V

CE

≤ V

CES

P

C

T

C

= 25°C 600 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

V

ISOL

50/60Hz t = 1min 2500 V~

I

ISOL

≤ 1mA t = 1s 3000 V~

M

d

Mounting Torque 1.5/13 Nm/lb.in.

Terminal Connection Torque 1.3/11.5 Nm/lb.in.

Weight 30 g

1200V XPT

TM

IGBT

GenX3

TM

SOT-227B, miniBLOC

G = Gate, C = Collector, E = Emitter

c either emitter terminal can be used as

Main or Kelvin Emitter

G

E c

C

E153432

Preliminary Technical Information

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYN82N120C3

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 60A, V

CE

= 10V, Note 1 30 50 S

C

ie

s

4060 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 285 pF

C

res

110 pF

Q

g(on)

215 nC

Q

ge

I

C

= 75A, V

GE

= 15V, V

CE

= 0.5 • V

CES

26 nC

Q

gc

84 nC

t

d(on)

29 ns

t

ri

78 ns

E

on

4.95 mJ

t

d(off)

192 ns

t

fi

93 ns

E

of

f

2.78 5.00 mJ

t

d(on)

29 ns

t

ri

90 ns

E

on

7.45 mJ

t

d(off)

200 ns

t

fi

95 ns

E

off

3.70 mJ

R

thJC

0.25 °C/W

R

thCS

0.05 °C/W

Inductive load, T

J

= 25°C

I

C

= 80A, V

GE

= 15V

V

CE

= 0.5 • V

CES

, R

G

= 2Ω

Note 2

Inductive load, T

J

= 125°C

I

C

= 80A, V

GE

= 15V

V

CE

= 0.5 • V

CES

, R

G

= 2Ω

Note 2

SOT-227B miniBLOC (IXYN)

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXYN82N120C3

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

20

40

60

80

100

120

140

160

00.511.522.533.544.55

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

10V

9V

7V

8V

6V

5V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

0 5 10 15 20 25 30

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

13V

12V

10V

8V

11V

5V

9V

7V

6V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

20

40

60

80

100

120

140

160

00.511.522.533.544.555.566.5

V

CE

- Volts

I

C

- Amperes

8V

7V

6V

5V

V

GE

= 15V

13V

11V

10V

9V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 82A

I

C

= 41A

I

C

= 164A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

1.5

2.5

3.5

4.5

5.5

6.5

7.5

8.5

5 6 7 8 9 101112131415

V

GE

- Volts

V

CE

- Volts

I

C

= 164

A

T

J

= 25ºC

82

A

41

A

Fig. 6. Input Admittance

0

20

40

60

80

100

120

140

160

3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8

V

GE

- Volts

I

C

-

Amperes

T

J

= 125ºC

25ºC

- 40ºC

IXYN82N120C3

IXYN82N120C3

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