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IXYN82N120C3

IXYN82N120C3
Mfr. #:
IXYN82N120C3
Manufacturer:
Littelfuse
Description:
IGBT Transistors 1200V XPT IGBT GenX3
Lifecycle:
New from this manufacturer.
Datasheet:
IXYN82N120C3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYN82N120C3 DatasheetIXYN82N120C3 Datasheet (P4-P6)
ECAD Model:
More Information:
IXYN82N120C3 more Information
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
SOT-227B-4
Mounting Style:
SMD/SMT
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1200 V
Collector-Emitter Saturation Voltage:
2.75 V
Maximum Gate Emitter Voltage:
30 V
Continuous Collector Current at 25 C:
120 A
Pd - Power Dissipation:
600 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Series:
IXYN82N120
Packaging:
Tube
Continuous Collector Current Ic Max:
120 A
Brand:
IXYS
Gate-Emitter Leakage Current:
100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
10
Subcategory:
IGBTs
Tradename:
XPT
Unit Weight:
1.058219 oz
Tags
IXYN8, IXYN, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Part # Mfg. Description Stock Price
IXYN82N120C3H1
DISTI # 23829664		IXYS CorporationTrans IGBT Chip N-CH 1.2KV 105A 4-Pin SOT-227B
RoHS: Compliant		220
  • 10:$29.5733
IXYN82N120C3H1
DISTI # IXYN82N120C3H1-ND		IXYS CorporationIGBT MODULE 1200V 105A SOT227B
RoHS: Compliant
Min Qty: 1
Container: Tube		136In Stock
  • 250:$27.5500
  • 100:$30.0200
  • 30:$32.3000
  • 10:$35.1500
  • 1:$38.0000
IXYN82N120C3
DISTI # IXYN82N120C3-ND		IXYS CorporationIGBT XPT 1200V 105A SOT-227B
RoHS: Compliant
Min Qty: 10
Container: Tube		Temporarily Out of Stock
  • 10:$29.5260
IXYN82N120C3
DISTI # 747-IXYN82N120C3		IXYS CorporationIGBT Transistors 1200V XPT IGBT GenX3
RoHS: Compliant		6
  • 1:$30.4000
  • 5:$28.8800
  • 10:$28.1200
  • 25:$25.8400
  • 50:$25.2200
  • 100:$24.0200
  • 200:$22.0400
IXYN82N120C3H1
DISTI # 747-IXYN82N120C3H1		IXYS CorporationIGBT Transistors XPT IGBT C3-Class 1200V/105A,Copack
RoHS: Compliant		37
  • 1:$38.0000
  • 5:$36.1000
  • 10:$35.1500
  • 25:$32.3000
  • 50:$31.5200
  • 100:$30.0200
  • 200:$27.5500
IXYN82N120C3H1IXYS CorporationGenX3 XPT IGBT 1200 V 105 A Chassis Mount High-Speed IGBT - SOT-227B
RoHS: Compliant		370Tube
  • 1:$28.1600
  • 2:$26.7700
  • 5:$25.0200
  • 10:$23.7800
  • 25:$21.1200
IXYN82N120C3
DISTI # 8047628		IXYS CorporationIGBT N-CH 1200V 66A XPT SOT227B, EA8
  • 1:£24.2000
  • 5:£21.7800
  • 10:£20.8100
  • 25:£20.0900
IXYN82N120C3H1
DISTI # 8047622		IXYS CorporationIGBT 1200V 105A XPT GENX3 DIODE SOT227B, EA3
  • 1:£27.4900
  • 2:£27.3600
  • 5:£27.2200
  • 10:£24.4600
  • 30:£23.3600
IXYN82N120C3H1
DISTI # 2674802		IXYS CorporationIGBT, N-CH, 1.2KV, 105A, SOT-227B
RoHS: Compliant		0
  • 1:£28.7500
  • 5:£27.3100
  • 10:£24.4400
  • 50:£23.8400
  • 100:£20.8400
IXYN82N120C3H1
DISTI # XSFT00000023520		IXYS CorporationGENX3 XPT IGBT 1200 V 105 A CHASSIS MOUNTHIGH-SPEED IGBT - SOT-227B
RoHS: Compliant		280
  • 10:$35.6400
Image Part # Description
DSEP2x61-12A

Mfr.#: DSEP2x61-12A

OMO.#: OMO-DSEP2X61-12A

 Rectifiers 120 Amps 1200V
IXTH6N120

Mfr.#: IXTH6N120

OMO.#: OMO-IXTH6N120

 MOSFET 6 Amps 1200V 2.700 Rds
DSEP2X61-12A

Mfr.#: DSEP2X61-12A

OMO.#: OMO-DSEP2X61-12A-IXYS-CORPORATION

 Rectifiers 120 Amps 1200V
IXTH6N120

Mfr.#: IXTH6N120

OMO.#: OMO-IXTH6N120-IXYS-CORPORATION

 IGBT Transistors MOSFET 6 Amps 1200V 2.700 Rds
Availability
Stock:
Available
On Order:
1989
Enter Quantity:
Current price of IXYN82N120C3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$30.40
$30.40
5
$28.88
$144.40
10
$28.12
$281.20
25
$25.84
$646.00
50
$25.22
$1 261.00
100
$24.02
$2 402.00
200
$22.04
$4 408.00
500
$20.98
$10 490.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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