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IXYN82N120C3
P1-P3
P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYN82N120C3
Fig. 7.
T
ra
ns
conduc
ta
nc
e
0
10
20
30
40
50
60
70
80
0
20
40
60
80
100
120
140
160
I
C
- Am
p
eres
g
f s
-
Si
emens
T
J
= -
40ºC
25ºC
125ºC
Fi
g. 10.
Reverse-Bi
as Safe Operati
ng Area
0
20
40
60
80
100
120
140
160
180
200
300
400
500
600
700
800
900
1000
1100
1200
V
CE
- Vo
l
ts
I
C
- Amperes
T
J
= 150ºC
R
G
= 2
Ω
dv
/ dt
< 10V / ns
Fi
g. 11.
M
axim
um
T
r
ansien
t T
herm
al I
m
ped
ance
0.001
0.01
0.1
1
0.000
01
0.0001
0.
001
0.01
0.1
1
10
Pul
se
W
idth
- Se
co
n
ds
Z
(th)JC
- ºC / W
Fig. 8
. Ga
te Cha
rge
0
2
4
6
8
10
12
14
16
0
20
40
60
80
100
120
140
160
180
200
220
Q
G
-
N
ano
C
oulo
mbs
V
GE
- Volt
s
V
CE
= 60
0V
I
C
= 82A
I
G
= 10mA
Fig. 9
. Ca
pac
it
anc
e
10
100
1,000
10,000
0
5
10
15
20
25
30
35
40
V
CE
- Vol
ts
Capacit
ance - Pi
coFarads
f
= 1 MH
z
C
ies
C
oes
C
res
© 2012 IXYS CORPORATION, All Rights Reserved
IXYN82N120C3
Fig. 12
. Induct
ive
Sw
itc
hing Ene
rgy Los
s v
s.
Gate Resistance
0
1
2
3
4
5
6
7
8
2
4
6
8
1
01
21
41
61
8
R
G
- Oh
m
s
E
off
- M
illiJ
ou
les
0
2
4
6
8
10
12
14
16
E
on
- M
illiJ
ou
les
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15
V
V
CE
= 60
0
V
I
C
= 40A
I
C
= 80A
Fig. 15
. Induct
iv
e Turn-off
Sw
itc
hing Tim
es v
s.
Gate Resistance
40
60
80
100
120
140
160
180
200
24
68
1
0
1
2
1
4
1
6
1
8
R
G
- Oh
m
s
t
f i
- Nanoseconds
140
220
300
380
460
540
620
700
780
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15
V
V
CE
= 60
0V
I
C
= 80A
I
C
= 40
A
Fig
. 13. In
ductive Switchin
g Energy Lo
ss vs
.
Collec
tor Curre
nt
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
40
50
60
70
80
90
100
I
C
- Am
p
eres
E
off
- M
illiJ
ou
les
1
2
3
4
5
6
7
8
9
10
E
on
- M
illiJ
ou
les
E
off
E
on
- - - -
R
G
= 2
Ω
,
V
GE
= 15
V
V
CE
= 60
0V
T
J
= 125ºC
T
J
= 25º
C
Fig. 14
. Induct
ive
Sw
itc
hing Ene
rgy Los
s vs
.
Junc
tion Tem
perat
ure
0.5
1
1.5
2
2.5
3
3.5
4
4.5
25
50
75
100
125
T
J
-
De
gre
e
s C
e
ntigr
ade
E
off
- M
illiJ
ou
les
1
2
3
4
5
6
7
8
9
E
on
- M
illiJ
ou
les
E
off
E
on
- - - -
R
G
= 2
Ω
,
V
GE
= 15V
V
CE
= 60
0
V
I
C
= 40A
I
C
= 80A
Fig. 1
6. Induc
tive
T
ur
n-of
f S
w
itc
hing Tim
es v
s.
Collec
tor Curre
nt
0
40
80
120
160
200
240
280
40
50
60
70
80
90
100
I
C
- A
m
pe
res
t
f i
- Nanoseconds
170
180
190
200
210
220
230
240
t
d(off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 2
Ω
, V
GE
= 15
V
V
CE
= 60
0V
T
J
= 125ºC
T
J
= 25
º
C
Fig. 17
. Induct
iv
e Turn-off
Sw
itc
hing Tim
es v
s.
Junct
ion T
e
m
pera
ture
0
40
80
120
160
200
240
25
50
75
100
125
T
J
- Deg
r
e
es Cen
tig
rad
e
t
f i
- Nanosec
o
nds
160
180
200
220
240
260
280
t
d
(
off
)
- Nanoseconds
t
f i
t
d(on)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 6
00
V
I
C
= 80
A
I
C
= 40
A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYN82N120C3
IXYS REF: IXY_82N120C3(8M)12-13-12-A
Fig. 1
9. I
nduc
tiv
e
Turn-on S
wit
c
hing Tim
es
vs
.
Collec
tor Curre
nt
20
40
60
80
100
120
140
40
50
60
70
80
90
1
00
I
C
- A
m
pe
res
t
r i
-
Nanoseconds
0
10
20
30
40
50
60
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 2
Ω
, V
GE
= 15
V
V
CE
= 600V
T
J
= 25º
C
T
J
= 125ºC
Fig. 20
. Induct
ive
T
urn-
on Sw
itching Tim
es v
s.
Jun
ctio
n T
em
p
eratu
re
0
20
40
60
80
100
120
140
25
50
75
100
125
T
J
- Deg
rees Cent
ig
rad
e
t
r i
- Nanoseconds
22
24
26
28
30
32
34
36
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 6
00
V
I
C
= 80A
I
C
= 40A
Fi
g.
18. I
ndu
ctive T
u
rn
-on
Switch
ing
T
im
es vs.
Gate R
esistan
ce
0
20
40
60
80
100
120
140
160
2
4
6
8
10
12
14
16
18
R
G
- Oh
m
s
t
r i
-
Nanoseconds
20
25
30
35
40
45
50
55
60
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 125ºC,
V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
P1-P3
P4-P6
IXYN82N120C3
Mfr. #:
Buy IXYN82N120C3
Manufacturer:
Littelfuse
Description:
IGBT Transistors 1200V XPT IGBT GenX3
Lifecycle:
New from this manufacturer.
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IXYN82N120C3