NXP Semiconductors
BGS8M2
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
BGS8M2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Product data sheet Rev. 5 — 20 August 2018
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15 Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe
precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST
61340-5, JESD625-A, or equivalent standards.
16 Abbreviations
Table 11. Abbreviations
Acronym Description
ESD ElectroStatic Discharge
HBM Human Body Model
LTE Long-Term Evolution
MMIC Monolithic Microwave Integrated Circuit
PCB Printed-Circuit Board
SiGe:C Silicon Germanium Carbon
17 Revision history
Table 12. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BGS8M2 v.5 20180820 product data sheet - BGS8M2 v.4
Modification changed from company confidential to public
BGS8M2 v.4 20180612 product data sheet - BGS8M2 v.3.1
Modifications: changed V
I(CTRL)
Max ON state value to V
cc
at recommended operating conditions
BGS8M2 v.3.1 20180517 product data sheet - BGS8M2 v.3
Modifications: inserted the standard ESD picture at handling information
BGS8M2 v.3 20170117 product data sheet - BGS8M2 v.2
Modifications: • Section 1: added LTE3001M according to our new naming convention
BGS8M2 v.2 20160329 product data sheet - BGS8M2 v.1
Modifications: • added phase variation Table 8 on page 5 and Table 9 on page 6
BGS8M2 v.1 20151222 Product data sheet - -