NXP Semiconductors
BGS8M2
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
BGS8M2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Product data sheet Rev. 5 — 20 August 2018
8 / 15
Symbol Parameter Conditions Min Typ Max Unit
Bypass mode
I
CC
supply current V
I(CTRL)
< 0.3 V - - 1 µA
f = 1843 MHz
[1][2]
-3.6 -2.1 -0.6 dB
f = 1960 MHz
[1][4]
-4.0 -2.2 -0.7 dB
G
p
power gain
f = 2140 MHz
[1][3]
-4.0 -2.5 -1.0 dB
f = 1843 MHz
[2]
- 12.0 - dB
f = 1960 MHz
[4]
- 11.0 - dB
RL
in
input return loss
f = 2140 MHz
[3]
- 10.0 - dB
f = 1843 MHz
[2]
- 10.0 - dB
f = 1960 MHz
[4]
- 9.5 - dB
RL
out
output return loss
f = 2140 MHz
[3]
- 9.0 - dB
[1] Guaranteed by device design; not tested in production.
[2] E-UTRA operating band 3 (1805 MHz to 1880 MHz).
[3] E-UTRA operating band 1 (2110 MHz to 2170 MHz).
[4] E-UTRA operating band 2 (1930 MHz to 1990 MHz).
[5] PCB losses are subtracted.
Table 9. Characteristics at V
CC
= 2.8 V
1805 MHz ≤ f ≤ 2200 MHz, V
CC
= 2.8 V, V
I(CTRL)
≥ 0.8 V and T
amb
= 25 °C. Input matched to 50 Ω using a 3.9 nH inductor in
series. Unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
between gain mode and bypass mode
f = 1843 MHz - - - deg
f = 1960 MHz
[1]
-5.0 - +5.0 deg
Δφ phase variation
f = 2140 MHz - - - deg
Gain mode
I
CC
supply current 3.8 5.8 7.8 mA
f = 1843 MHz
[1][2]
12.5 14.5 16.5 dB
f = 1960 MHz
[3]
12.4 14.4 16.4 dB
G
p
power gain
f = 2140 MHz
[1][4]
11.7 13.7 15.7 dB
f = 1843 MHz
[2]
- 5.5 - dB
f = 1960 MHz
[3]
- 6.5 - dB
RL
in
input return loss
f = 2140 MHz
[4]
- 7.5 - dB
f = 1843 MHz
[2]
- 12.0 - dB
f = 1960 MHz
[3]
- 12.0 - dB
RL
out
output return loss
f = 2140 MHz
[4]
- 11.0 - dB
f = 1843 MHz
[2]
- 25.0 - dB
f = 1960 MHz
[3]
- 24.0 - dB
ISL isolation
f = 2140 MHz
[4]
- 23.0 - dB
