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TISP4040H1BJR-S

P1-P3P4-P6P7-P9
AUGUST 1999 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP40xxH1BJ VLV Overvoltage Protector Series
TISP4015H1BJ, TISP4030H1BJ, TISP4040H1BJ
VERY LOW VOLTAGE
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Description
Low Capacitance
‘4015 ...................................................................................78 pF
‘4030 ...................................................................................62 pF
‘4040 ...................................................................................59 pF
Digital Line Signal Level Protection
-ISDN
-xDSL
Safety Extra Low Voltage, SELV, values
Device
V
DRM
V
V
(BO)
V
‘4015 ± 8 ± 15
‘4030 ± 15 ± 30
‘4040 ± 25 ± 40
100 A “H” Series specified for:
ITU-T recommendations K.20, K.45, K.21
FCC Part 68 and GR-1089-CORE
Wave Shape Standard
I
TSP
A
2/10 µs GR-1089-CORE 500
8/20 µs IEC 61000-4-5 400
10/160 µs FCC Part 68 200
10/700 µs
ITU-T K.20/45/21
FCC Part 68
150
10/560 µs FCC Part 68 125
10/1000 µs GR-1089-CORE 100
These devices are designed to limit overvoltages on digital telecommunication lines. Overvoltages are normally caused by a.c. power system
or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is
typically used for the protection of transformer windings and low voltage electronics.
How to Order
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on-state condition. This low-voltage on state
causes the current resulting from the overvoltage to be safely diverted through the device. The device switches off when the diverted current
falls below the holding current value.
Device Symbol
SMBJ Package (Top View)
12
T(A)
R(B)
MDXXBGE
T
R
SD4XAA
T
erminals T and R correspond to the
alternative line designators of A and B
............................................ UL Recognized Components
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Device Package Carrier
TISP40xxH1BJ SMB (DO-214AA) Embossed Tape Reeled
Marking Code
40xxH1
Std. Qty.
3000TISP40xxH1BJR-S
Insert xx value corresponding to protection voltages of 15 V, 30 V and 40 V.
Order As
*
R
o
H
S
C
O
M
P
L
I
A
N
T
AUGUST 1999 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Absolute Maximum Ratings, T
A
= 25 °C (Unless Otherwise Noted)
TISP40xxH1BJ VLV Overvoltage Protector Series
Electrical Characteristics, T
A
= 25 °C (Unless Otherwise Noted)
Rating Symbol Value Unit
Repetitive peak off-state voltage
‘4015
‘4030
‘4040
V
DRM
±8
±15
± 25
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
I
TSP
A
2/10 µs (Telcordia GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/310 µs (ITU-T K.20/45/21, 10/700 µs voltage wave shape)
5/320 µs (FCC Part 68, 9/720 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (Telcordia GR-1089-CORE, 10/1000 µs voltage wave shape)
± 500
± 400
± 200
± 150
± 150
± 125
± 100
Non-repetitive peak on-state current (see Notes 1 and 2)
I
TSM
A
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
0.2 s 50 Hz/60 Hz a.c.
2 s 50 Hz/60 Hz a.c.
1000 s 50 Hz/60 Hz a.c.
45
50
21
7
2
Initial rate of rise of current (2/10 waveshape) di/dt 450 A/µs
Junction temperature T
J
-40 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
NOTES: 1. Initially the device must be in thermal equilibrium with T
J
=25°C.
2. The surge may be repeated after the device returns to its initial conditions.
Parameter Test Conditions Min Typ Max Unit
I
DRM
Repetitive peak off-
state current
V
D
=V
DRM
±5 µA
V
(BO)
Breakover voltage di/dt = ±0.8 A/ms
‘4015
‘4030
‘4040
±15
±30
±40
V
V
(BO)
Impulse breakover
voltage
dv/dt
≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±12 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
‘4015
‘4030
‘4040
±33
±57
±74
V
I
(BO)
Breakover current di/dt = ±0.8 A/ms ±0.8 A
I
D
O
V
T
I= ±5 A, t = 100 µs ±3V
Tw
On-state voltage
ff-state current
V
D
= ± 6V
V
D
= ± 13 V
V
D
= ± 22 V
‘4015
‘4030
‘4040
±2 µA
I
H
Holding current I
T
= ±5A, di/dt=-/+30mA/ms ±50 m A
AUGUST 1999 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP40xxH1BJ VLV Overvoltage Protector Series
Electrical Characteristics, T
A
= 25 °C (Unless Otherwise Noted) (Continued)
C
off
Off-state capacitance
f=1MHz, V
d
=1V rms, V
D
=0
f=1MHz, V
d
=1V rms, V
D
=1V
f=1MHz, V
d
=1V rms, V
D
=2V
‘4015
‘4030
‘4040
‘4015
‘4030
‘4040
‘4015
‘4030
‘4040
78
62
59
70
55
52
65
50
47
100
81
77
90
72
68
85
65
61
pF
Parameter Test Conditions Min Typ Max Unit
Thermal Characteristics
Parameter Test Conditions Min Typ Max Unit
R
θJA
Junction to free air thermal resistance
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
T
A
= 25 °C, (see Note 3)
115
°C/W
265 mm x 210 mm populated line card,
4-layer PCB, I
T
= I
TSM(1000)
, T
A
= 25 °C
52
NOTE 3: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
P1-P3P4-P6P7-P9

TISP4040H1BJR-S

Mfr. #:
Buy TISP4040H1BJR-S
Manufacturer:
Bourns
Description:
Thyristor Surge Protection Devices (TSPD) Very Low Volt Bidirectional
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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