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TISP4040H1BJR-S
P1-P3
P4-P6
P7-P9
AUGUST 1999 - REVISED JANUAR
Y 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP40xxH1BJ VL
V Over
voltage Protector Series
Parameter Measurement Information
Figure 1. V
oltage-Current Characteristic for T and R T
erminals
All Measurements ar
e Referenced to the R T
erminal
-v
V
DRM
I
DRM
V
D
I
H
I
TSM
I
TSP
V
(BO)
I
(BO
)
I
D
Qu
adr
ant I
I
Swit
chin
g
Char
ac
ter
istic
+v
+i
V
(BO)
I
(BO
)
V
DRM
I
DRM
V
D
I
D
I
H
I
TSM
I
TSP
-i
Quadran
t III
Switchin
g
Char
acter
ist
ic
PM
4AC
AUGUST 1999 - REVISED JANUAR
Y 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP40xxH1BJ VL
V Over
voltage Protector Series
T
ypical Characteristics
Figur
e 2.
CAP
A
CITANCE
vs
OFF-
ST
ATE VOL
T
A
GE
V
D
-
Of
f-
state Vo
lt
age
-
V
0.01
0.02
0.05
0.1
0.2
0.5
1
2
3
5
10
20
30
C
off
–
Capacitance
–
pF
20
30
40
50
60
70
80
TC4H1AE
'
4040
'
4030
'
4015
T
J
= 25
°
C
V
d
= 1 Vr
ms
AUGUST 1999 - REVISED JANUAR
Y 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP40xxH1BJ VL
V Over
voltage Protector Series
Rating and Thermal Information
Figu
r
e 3.
NON-REPETITIVE PEAK ON-ST
A
TE CURRENT
vs
CURRENT DURA
TION
t
-
Current
Durati
on
-
s
0.01
0.1
1
10
100
1000
I
TSM(t)
-
Non-Repetitive Peak On-State Current - A
1.5
2
3
4
5
6
7
8
15
20
30
40
50
60
10
TI
4MAJ
V
GEN
= 600 Vr
ms,
50/
60 H
z
R
GEN
= 1.4*V
GEN
/I
TSM(t)
EIA/
J
ESD5
1-
2 ENVI
RONMENT
EIA/
J
ESD5
1-
3 PCB
T
A
= 25
C
°
P1-P3
P4-P6
P7-P9
TISP4040H1BJR-S
Mfr. #:
Buy TISP4040H1BJR-S
Manufacturer:
Bourns
Description:
Thyristor Surge Protection Devices (TSPD) Very Low Volt Bidirectional
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
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Union
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