VS-ETL015Y120H
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Vishay Semiconductors
Revision: 16-Jun-16
2
Document Number: 94858
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Notes
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
(1)
V
CC
= 600 V, V
GE
= 15 V, L = 500 μH, R
g
= 4.7 :, T
J
= 150 °C
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT
Collector to emitter voltage V
CES
1200
V
Gate to emitter voltage V
GES
20
Pulsed collector current I
CM
40
A
Clamped inductive load current I
LM
(1)
40
Continuous collector current I
C
T
C
= 25 °C 22
AT
C
= 80 °C 15
T
SINK
= 80 °C 11
Power dissipation P
D
T
C
= 25 °C 89
W
T
C
= 80 °C 50
Da1 - Da2 - Db1 - Db2 CLAMPING DIODE
Repetitive peak reverse voltage V
RRM
1200 V
Single pulse forward current I
FSM
10 ms sine or 6 ms rectangular pulse, T
J
= 25 °C 95
A
Diode continuous forward current I
F
T
C
= 25 °C 22
T
C
= 80 °C 14
T
SINK
= 80 °C 10
Power dissipation P
D
T
C
= 25 °C 80
W
T
C
= 80 °C 45
DTa1 - DTa2 - DTb1 - DTb2 AP DIODE
Single pulse forward current I
FSM
10 ms sine or 6 ms rectangular pulse, T
J
= 25 °C 95
A
Diode continuous forward current I
F
T
C
= 25 °C 22
T
C
= 80 °C 14
T
SINK
= 80 °C 10
Power dissipation P
D
T
C
= 25 °C 80
W
T
C
= 80 °C 45
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
DbpA - DbpB BYPASS DIODE
Reverse leakage current I
RRM
V
RRM
= 1200 V - - 0.14
mA
V
RRM
= 1200 V, T
J
= 150 °C - - 3.0
Forward voltage drop V
FM
I
F
= 20 A - 1.04 1.23
V
I
F
= 20 A, T
J
= 150 °C - 0.95 -
Forward slope resistance rt
T
J
= 150 °C
--6.6m:
Conduction threshold voltage V
T
- - 0.73 V
Ta1 - Ta2 -Tb1 - Tb2 PFC IGBT
Collector to emitter breakdown voltage BV
CES
V
GE
= 0 V, I
C
= 250 μA 1200 - -
VCollector to emitter voltage V
CE(ON)
V
GE
= 15 V, I
C
= 15 A - 2.61 3.03
V
GE
= 15 V, I
C
= 15 A, T
J
= 125 °C - 3.05 -
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 400 μA 4.5 5.8 8.1
Temperature coefficient of threshold
voltage
'V
GE(th)
/'T
J
V
CE
= V
GE
, I
C
= 1.0 mA (25 °C to 125 °C) - -14 - mV/°C
Forward transconductance g
fe
V
CE
= 20 V, I
C
= 15 A - 8 - S
Transfer characteristics V
GE
V
CE
= 20 V, I
C
= 15 A - 10 - V
Zero gate voltage collector current I
CES
V
GE
= 0 V, V
CE
= 1200 V - 0.0003 0.075
mA
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 125 °C - 0.24 -
Gate to emitter leakage current I
GES
V
GE
= ± 20 V, V
CE
= 0 V - - ± 200 nA
ABSOLUTE MAXIMUM RATINGS
