VS-ETL015Y120H
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Vishay Semiconductors
Revision: 16-Jun-16
10
Document Number: 94858
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Fig. 27 - Maximum Thermal Impedance Z
thJC
Characteristics (DTa1 - DTa2 - DTb1 - DTb2 Antiparallel Diode)
ORDERING INFORMATION TABLE
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
t
1
-
Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impedance
Junction to Case (°C/W)
0.5
0.2
0.1
0.05
0.02
0.01
DC
1 - Vishay Semiconductors product
2 - Package indicator (ET = EMIPAK-2B)
3 - Circuit configuration (L = double interleaved boost converter)
4 - Current rating (015 = 15 A)
5 - Switch die technology (Y = trench IGBT)
6 - Voltage rating (120 = 1200 V)
7 - Diode die technology (H = HEXFRED diode)
Device code
51 32 4 6 7
VS- ET L 015 Y 120 H
